A kind of preparation method of light-emitting diode epitaxial wafer

Abstract

The invention discloses a preparation method of a light emitting diode epitaxial wafer, belonging to the field of light emitting diode manufacture. When the substrate is placed into the turntable of the organic chemical vapor deposition apparatus, the distance between the midpoint of the chord of the arcuate rounded edge surface and the axis of rotation is greater than the distance between the midpoint of the arc of the arcuate rounded edge surface and the axis of rotation, such an arrangement that the flat edge surface of the substrate faces the side away from the axis of rotation of the turntable. At this time, under the centrifugal force of the tray, the rounded edge surface portion of the substrate moves away from the flat edge surface, the friction between the peripheral portion of the epitaxial layer on the round edge surface and the sidewall of the circular groove is reduced, so that the temperature of the epitaxial layer of the part is not too high, the In in the InGaN well layer in the peripheral part is not excessively lost, the wavelength difference between the central part of the epitaxial layer grown on the round edge surface and the wavelength of the light wave emitted from the peripheral part is not too large, and the light emitting uniformity of the light emitting diode is further ensured.

Description

technical field [0001] The invention relates to the field of light-emitting diode manufacturing, in particular to a method for preparing a light-emitting diode epitaxial wafer. Background technique [0002] Light-emitting diodes are semiconductor diodes that can convert electrical energy into light energy. They have the advantages of small size, long life, and low power consumption. They are currently widely used in automotive signal lights, traffic lights, display screens, and lighting equipment. The epitaxial wafer is the basic structure for making light-emitting diodes. The structure of the epitaxial wafer includes a substrate and an epitaxial layer grown on the substrate. [0003] At present, metal-organic chemical vapor deposition (English: Metal-organic Chemical Vapor Deposition, MOCVD for short) equipment is usually used to grow epitaxial wafers. The MOCVD equipment includes a reaction chamber, a turntable and a rotating shaft placed in the reaction chamber. figure 1...

AI Technical Summary

Problems solved by technology

Since the heat required for growing the epitaxial wafer is transferred through the turntable A, the temperature of the part that is attached to the side wall of the circular groove a is relatively high, the In in the InGaN well layer will be lost, and the wavelength of the emitted light will be reduced. There is a deviation, which affects the uniformity of light emitting diodes

Images