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Quantum dot light emitting device

A technology of quantum dot luminescence and components, which is applied in the direction of electrical components, electrical solid devices, semiconductor devices, etc., and can solve problems such as easy agglomeration, uneven particle size and roughness of zinc oxide

Pending Publication Date: 2019-01-01
TORAY ADVANCED MATERIALS RES LAB CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, zinc oxide has the problems of uneven particle size and easy agglomeration
The film deposited by spin coating will appear relatively rough, resulting in large current leakage and other problems, which seriously affect the driving voltage, life, luminous efficiency and color purity of quantum dot light-emitting elements.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] The ITO substrate is cleaned, PEDOT:PSS (CAS: 155090-83-8) is printed on the ITO electrode layer, and then dried by a vacuum low pressure hot plate to form a hole injection layer with a thickness of 35nm, and then PVK material (CAS) is printed on the hole injection layer. :25067-59-8) and use the vacuum low pressure hot plate to heat and dry the formed hole transport layer, print the quantum dot material (composition CdSe / CdS / ZnS) on the hole transport layer and use the vacuum low pressure heat press A 5nm light-emitting layer was formed by drying, E-4 was vapor-deposited on the light-emitting layer to form a 40-nm electron transport layer, then 0.5-nm LiF was vapor-deposited, and finally silver was vapor-deposited to form a 100-nm electrode layer, and the light-emitting element was packaged and formed.

[0064] The positive electrode of the prepared light-emitting element was an ITO electrode and the negative electrode was a silver electrode, and the driving voltage was te...

Embodiment 2

[0067] The ITO substrate is cleaned, PEDOT:PSS (CAS: 155090-83-8) is printed on the ITO electrode layer, and then dried by a vacuum low pressure hot plate to form a hole injection layer with a thickness of 35nm, and then PVK material (CAS) is printed on the hole injection layer. :25067-59-8) and use the vacuum low pressure hot plate to heat and dry the formed hole transport layer, print the quantum dot material (composition CdSe / CdS / ZnS) on the hole transport layer and use the vacuum low pressure heat press A 5nm light-emitting layer was formed by drying, E-33 was vapor-deposited on the light-emitting layer to form a 40-nm electron transport layer, then 0.5-nm LiF was vapor-deposited, and finally silver was vapor-deposited to form a 100-nm electrode layer, and the light-emitting element was packaged.

[0068] The positive electrode of the prepared light-emitting element is an ITO electrode, and the negative electrode is a silver electrode. A digital source meter (DigitalSource met...

Embodiment 3

[0071] The ITO substrate is cleaned, PEDOT:PSS (CAS: 155090-83-8) is printed on the ITO electrode layer, and then dried by a vacuum low pressure hot plate to form a hole injection layer with a thickness of 35nm, and then PVK material (CAS) is printed on the hole injection layer. :25067-59-8) and use the vacuum low pressure hot plate to heat and dry the formed hole transport layer, print the quantum dot material (composition CdSe / CdS / ZnS) on the hole transport layer and use the vacuum low pressure heat press A 5nm light-emitting layer was formed by drying, E-20 was vapor-deposited on the light-emitting layer to form a 40-nm electron transport layer, then 0.5-nm LiF was vapor-deposited, and finally silver was vapor-deposited to form a 100-nm electrode layer, and the light-emitting element was packaged.

[0072] The positive electrode of the prepared light-emitting element is an ITO electrode, and the negative electrode is a silver electrode. A digital source meter (DigitalSource met...

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Abstract

The invention provides a quantum dot light emitting device. An electron injection layer and an electron transport layer of the quantum dot light emitting device contain a phenanthroline compound or aquinoline compound. The light emitting device provided by the invention can achieve high light emitting efficiency and high color reproduction. The quantum dot light emitting device can be used as a light source for backlight, lighting and meters of a quantum dot display and a liquid crystal display, a marking board or an identification lamp.

Description

Technical field [0001] The present invention relates to quantum dot light-emitting elements, in particular to luminescent materials between cathodes and anodes that can be used in display elements, flat panel displays, backlights, lighting, interior decoration, pointers, billboards, electronic cameras, and light signal generators. Quantum dot light-emitting element using quantum dot material. Background technique [0002] Quantum dots, also known as nanocrystals, are composed of a limited number of atoms, all on the order of nanometers in size. It can emit light when subjected to light or electricity, and the emission spectrum can be controlled by changing the size of the quantum dot. [0003] A light-emitting element using a light-emitting material of quantum dot material between the cathode and the anode is also called a quantum dot light-emitting device (QLED, Quantum Dot Light Emitting Device). With the continuous development of science and technology, people have higher requ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/6572H10K50/115
Inventor 金光男池田武史
Owner TORAY ADVANCED MATERIALS RES LAB CHINA