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A way to improve sio 2 Chemical Vapor Deposition Method for Thin Film Densification

A chemical vapor deposition, atmospheric pressure chemical vapor technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of poor film density, poor film step coverage, particle pollution and other problems

Active Publication Date: 2020-09-18
上海中欣晶圆半导体科技有限公司
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The advantage of this method is that the reaction is simple, the deposition rate is fast, and the reaction temperature is low. The disadvantage is that the SiO produced by the reaction 2 The step coverage of the film is poor, there is particle contamination, and the film density is poor

Method used

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  • A way to improve sio <sub>2</sub> Chemical Vapor Deposition Method for Thin Film Densification
  • A way to improve sio <sub>2</sub> Chemical Vapor Deposition Method for Thin Film Densification

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Embodiment Construction

[0020] The present invention will be further described below in conjunction with the accompanying drawings.

[0021] see figure 1 , an improved SiO 2 A chemical vapor deposition method for thin film density, covering the surface of silicon wafers with SiO through a crawler-type atmospheric pressure chemical vapor deposition device 2 Film; control the speed of the crawler in the crawler atmospheric pressure chemical vapor deposition device to 4.8inch / min-5.3inch / min. This patent optimizes the speed of the crawler. After testing, when the speed of the crawler is 4.8inch / min-5.3inch / min, compared with the traditional speed of 6.5inch / min, when other parameters remain unchanged, SiO 2 The compactness of the film is obviously improved, which solves the problem of poor compactness of the traditional atmospheric pressure chemical vapor deposition film.

[0022] The speed of the track is 5inch / min. After testing, at this speed, the effect is the best.

[0023] Take SiH 4 As a si...

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Abstract

The invention relates to the technical field of semiconductor processing, and discloses a chemical vapor deposition method for improving SiO2 thin film compactness. The method is characterized by including the steps: covering a SiO2 thin film on the surface of a silicon wafer through a crawler-type normal-pressure chemical vapor deposition device; controlling the speed of tracks in the crawler-type normal-pressure chemical vapor deposition device to reach 4.8inch / min-5.3inch / min. According to the method, the speed of the tracks is optimized, experiments show that when the speed of the tracks is 4.8inch / min-5.3inch / min, the SiO2 thin film compactness is obviously improved as compared with traditional speed of 6.5inch / min, and the method solves the problem of poor compactness of a traditional normal-pressure chemical vapor deposition thin film.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a chemical vapor deposition method. Background technique [0002] SiO 2 Thin films are widely used in the semiconductor industry. It can be used as a protective layer for semiconductor silicon wafers to prevent the surface of silicon wafers from being scratched. It can also be used as an isolation layer to prevent leakage. Atmospheric pressure chemical vapor deposition (APCVD) technology is to mix a certain proportion of silane and oxygen in the reaction chamber at about 400 ° C to conduct SiO 2 film growth. The advantage of this method is that the reaction is simple, the deposition rate is fast, and the reaction temperature is low. The disadvantage is that the SiO produced by the reaction 2 The step coverage of the film is poor, there is particle contamination, and the film density is poor. Contents of the invention [0003] Aiming at the problems existin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/453C23C16/52C23C16/40
CPCC23C16/402C23C16/453C23C16/52
Inventor 马爱贺贤汉李传玉
Owner 上海中欣晶圆半导体科技有限公司