Semiconductor structure and forming method thereof

Abstract

A semiconductor structure and a forming method thereof are provided, the forming method comprising: forming a substrate; forming a precursor dielectric layer on the substrate; The precursor dielectriclayer is densely implanted to form an interlayer dielectric layer. The dense injection process can drive H release in the precursor dielectric layer, thereby facilitating the improvement of the density of the interlayer dielectric layer and effectively improving the performance of the interlayer dielectric layer; And the process temperature can be effectively controlled by the method of dense injection treatment to drive the H release, thereby facilitating the control of the thermal budget and effectively reducing the influence of the interlayer dielectric layer formation process on other semiconductor structures; Therefore, the technical proposal of the invention can improve the density of the interlayer dielectric layer on the premise of controlling the thermal budget, can realize boththe density improvement and the thermal budget reduction, and is favorable for improving the electrical performance of the formed semiconductor structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology and the continuous development of integrated circuit manufacturing technology, people's requirements for the integration and performance of integrated circuits are becoming higher and higher. Semiconductor devices are developing toward higher element density and higher integration. In order to improve integration and reduce costs, the critical dimensions of components are getting smaller and smaller, and the density of components and circuits inside integrated circuits is increasing. This development makes the spacing between adjacent components and adjacent circuits Getting smaller and smaller. [0003] In semiconductor manufacturing technology, electrical isolation is usually achieved between adjacent components a...

AI Technical Summary

Problems solved by technology

However, after the introduction of the fluid chemical vapor deposition process, the formed semiconductor structure often has poor electrical properties.

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