Silicon heterojunction solar cell and preparation method thereof

Abstract

The invention discloses a silicon heterojunction solar cell and a preparation method thereof. Wherein the solar cell comprises an n-type crystalline silicon substrate layer; a lightly doped an n-typehydrogenated amorphous silicon buffer layer formed on the upper and lower side surfaces of the substrate layer; a heavily doped p-type hydrogenated amorphous silicon emitter layer formed on the surface of one hydrogenated amorphous silicon buffer layer; a heavily doped n-type hydrogenated amorphous silicon back field layer formed on the surface of the other hydrogenated amorphous silicon buffer layer; a transparent conductive oxide layer formed on the surface of the hydrogenated amorphous silicon emitter layer and the hydrogenated amorphous silicon back field layer; a metal gate line electrodelay including an alloy transition lay formed on at least one surface of a transparent conductive oxide layer, a hydrogenated amorphous silicon back field layer and a hydrogenated amorphous silicon emitter layer; and a copper-containing conductive alloy layer formed on the surface of the alloy transition layer.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a silicon heterojunction solar cell containing a copper alloy electrode and a preparation method thereof. Background technique [0002] In conventional crystalline silicon-based solar cells, electrodes are usually prepared by screen-printing Ag paste and then sintered at high temperature (>700°C) to form a good ohmic contact between Ag and the substrate Si. It is a high temperature Ag paste. However, the electrodes formed by this method have the characteristics of expensive materials, wide line width, and limited line height, and limit the application of thinner silicon wafers, which is becoming one of the limiting factors for further reducing battery costs and improving efficiency. [0003] In amorphous silicon / crystalline silicon heterojunction solar cells, since amorphous silicon thin films are used to form p-n junctions, the formation temperature of the thin films determines th...

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Problems solved by technology

This electrode has thinner grid lines and lower contact resistance, but it also has the problem of poor adhesion between the stacked metal layer and the substrate Si, and the barrier layer of a single element such as Ni, Ta, Ti, Cr, etc. The rate is high, if the alloy of Cu is formed, the conductivity can be improved, and the alloying of Cu is also beneficial to improve the oxidation and corrosion resistance of pure copper

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