Quantum dot ink and electroluminescence device
A technology of electroluminescent devices and quantum dots, which is applied in the direction of electro-solid devices, electrical components, semiconductor devices, etc., can solve the problem of low efficiency of electroluminescent devices, and achieve the effect of high current efficiency
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Embodiment 1
[0035] This embodiment provides a quantum dot ink, the quantum dots are CdSe / ZnS quantum dots with a particle size of about 10nm, the solvent is composed of n-octane and 2-methyl-2,4-pentanediol, and the size of the nanoparticles is about 8nm zirconia nanoparticles. The ligand on the surface of quantum dots is trioctyl mercaptan, and the ligand on the surface of zirconia nanoparticles is stearic acid.
[0036] The specific composition of the quantum dot ink in this embodiment is as follows, by weight percentage, including 5.00% of CdSe / ZnS quantum dots, 1.00% of zirconia nanoparticles, 49.00% of n-octane, 2-methyl-2,4-pentanedi Alcohol 45.00%.
[0037]After testing, the viscosity of the quantum dot ink in this embodiment is 11.2cp, and the surface tension is 30.5mN / m.
Embodiment 2
[0039] This embodiment provides a quantum dot ink. The quantum dots are CdSe / ZnS quantum dots with a particle size of about 15 nm. The solvent is composed of n-octane, n-dodecyl alcohol and n-decyl alcohol. particles. The ligand on the surface of quantum dots is trioctyl mercaptan, and the ligand on the surface of silicon nitride nanoparticles is a silane coupling agent. The preparation of quantum dots and silicon nitride nanoparticles in this embodiment can refer to the prior art.
[0040] The specific composition of the quantum dot ink in this embodiment is as follows, by weight percentage, including 2.00% of CdSe / ZnS quantum dots, 0.20% of silicon nitride nanoparticles, 10.00% of n-octane, 80.00% of n-dodecyl alcohol, n-decyl alcohol 7.80%.
[0041] After testing, the viscosity of the quantum dot ink in this embodiment is 10.5cp, and the surface tension is 31.2mN / m.
Embodiment 3
[0043] This embodiment provides an electroluminescent device, the preparation process of which is as follows:
[0044] Provide a substrate containing an ITO anode;
[0045] Preparation of hole injection layer: Spin-coat PEDOT:PSS aqueous solution on ITO to prepare hole injection layer;
[0046] Hole transport layer preparation: spin coating poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] in chlorobenzene solution to prepare hole transport layer;
[0047] Preparation of the quantum dot light-emitting layer: printing the quantum dot ink in Example 1 on the hole transport layer to prepare the quantum dot light-emitting layer;
[0048] Preparation of the electron transport layer: Spin-coat ZnO ethanol solution on the quantum dot light-emitting layer to prepare the electron transport layer;
[0049] Preparation of the cathode: put the spin-coated device into the vacuum evaporation chamber, and evaporate aluminum to obtain the cathode layer.
[0050] After testing, the cu...
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Abstract
Description
Claims
Application Information
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