Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for preparing a crystalline silicon solar cell having a polycrystalline silicon passivation film

A solar cell and passivation film technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as cost reduction and efficiency increase, and achieve the effects of reducing current density, avoiding black hole residue, and controllable reaction speed

Inactive Publication Date: 2019-01-15
SHANGHAI SHENZHOU NEW ENERGY DEV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the expensive TMA consumption in the AlO deposition process faces the challenge of cost reduction and efficiency increase of current photovoltaic products

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing a crystalline silicon solar cell having a polycrystalline silicon passivation film
  • A method for preparing a crystalline silicon solar cell having a polycrystalline silicon passivation film
  • A method for preparing a crystalline silicon solar cell having a polycrystalline silicon passivation film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The following will combine figure 1 The preparation method of the crystalline silicon solar cell provided with the polysilicon passivation film of the present invention will be further described in detail.

[0028] The preparation method of the crystalline silicon solar cell possessing the polysilicon passivation film of the present invention comprises the following steps:

[0029] 1) Carry out double-sided polishing to the silicon wafer;

[0030] Clean the silicon wafer in a mixed alkali solution of NaOH and NaClO to remove the surface damage layer and cutting line marks, and complete double-sided polishing;

[0031] The mixed alkali solution of NaOH and NaClO, the volume ratio of NaOH and NaClO is 3:1~1:1;

[0032] This step has both cleaning and polishing processes, which saves the pre-cleaning process and improves production capacity;

[0033] 2) Put the polished silicon chip into the metal salt solution to decorate the metal particles;

[0034] Preferably, the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

A method for preparing a crystalline silicon solar cell with a polycrystalline silicon passivation film comprises: forming a nano-suede structure on the surface of a silicon wafer; Forming an emitteron the front surface of the silicon wafer; A one-step wet etching method is adopted to remove the phosphor-silicate glass and polish the back surface of the silicon wafer. On the back of the polishedsilicon wafer, SiO was deposited by LPCVD, SiO2 passivation layer was formed on the back of the silicon wafer, and then PolySi passivation layer was deposited on the back of the silicon wafer by LPCVD. SiNx passivation layer was deposited on silicon emitter and PolySi passivation layer by PECVD.

Description

technical field [0001] The invention relates to the preparation of a crystalline silicon solar cell, in particular to a method for preparing a crystalline silicon solar cell with a polycrystalline silicon passivation film. Background technique [0002] Due to the mature production process and low manufacturing cost, P-type polycrystalline silicon cells still occupy the vast majority of the market share at present and for a long period of time in the future. Following the guidelines issued by the State Council on the efficiency of monocrystalline cells greater than 20% and the efficiency of polycrystalline cells greater than 18% in the new production capacity of the photovoltaic industry, choose a solution that is easy to be compatible with existing scale production lines and easy to control production costs, and quickly update core technologies It is the general trend. If P-type crystalline silicon solar cells want to continue to maintain their competitiveness and achieve g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/068H01L31/0216H01L31/0236
CPCH01L31/02167H01L31/02363H01L31/068H01L31/1804H01L31/1868Y02E10/546Y02E10/547Y02P70/50
Inventor 张松李荣瑞梁小静刘慎思陶智华郑飞
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com