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A lithographic method, a mask, and a lithographic system

A mask and lithography technology, applied in the fields of masks, lithography systems, and lithography methods, can solve problems such as large overlay errors, and achieve the effect of improving yield

Inactive Publication Date: 2019-01-18
赛莱克斯微系统科技(北京)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] By providing a photolithography method, a mask and a photolithography system, the present invention improves the technical problem of large overlay errors in the existing multilayer mask overlay

Method used

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  • A lithographic method, a mask, and a lithographic system
  • A lithographic method, a mask, and a lithographic system
  • A lithographic method, a mask, and a lithographic system

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0037] In this embodiment, a photolithography method is provided, such as figure 1 shown, including:

[0038] Step S101, sequentially overetching and exposing the first layer of mask to generate the first overlay mark, exposing the second layer of mask to generate the second overlay mark, and exposing the third layer of mask to generate the third overlay mark;

[0039] Step S102, measuring and obtaining the first error data of the third overlay mark and the first overlay mark, and the second error data of the third overlay mark and the second overlay mark;

[0040] Step S103: Calculate an average correction error according to the first error data and the second error data, and use the average correction error to correct the exposure parameters of the third-layer mask.

[0041] It should be noted that overlay is a lithography process in which the patterns exposed by multiple layers of masks are stacked together. The lithography machine uses the first layer of mask until all th...

Embodiment 2

[0057] This embodiment provides a multi-layer mask, including:

[0058] The first overlay mark pattern on the first layer mask, the second overlay mark pattern on the second layer mask, and the third overlay mark pattern on the third layer mask, wherein the A layer of masks, a second layer of masks and a third layer of masks are masks used for sequential overetching and exposure; the first set of engraving mark patterns, the second set of engraving mark patterns and the third set of engraving marks The sizes of the engraved marks are all different, so that the first, second and third overlay marks generated by the corresponding overlay exposure are in a ring-shaped triple nested shape.

[0059] In the embodiment of the present application, the first set of engraving marks is a rectangular mark or a hollow rectangular mark; the second set of engraving marks is a rectangular mark or a hollow rectangular mark; the third set of engraving marks is a rectangular mark or a hollow re...

Embodiment 3

[0063] This embodiment provides a lithography system, such as Image 6 shown, including:

[0064] The lithography machine 601 is used for sequentially overetching and exposing a first layer of mask to generate a first overlay mark, exposing a second layer of mask to generate a second overlay mark, and exposing a third layer of mask to generate a third overlay mark;

[0065] The measuring machine 602 is used to measure and obtain the first error data of the third overlay mark and the first overlay mark, and the second overlay of the third overlay mark and the second overlay mark. Error data; calculate the average correction error according to the first error data and the second error data, and transmit the average correction error to the lithography machine, so that the lithography machine adopts the average correction error Error correcting exposure parameters of the third layer mask.

[0066] In the embodiment of the present application, the measuring machine 602 is further...

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Abstract

The invention discloses a lithographic method, a mask and a lithographic system. The method comprises the following steps: a first set of etching marks is generated by sequentially nesting and exposing a first layer of mask; a second set of etching marks is generated by exposing a second layer of mask; and a third set of etching marks is generated by exposing a third layer of mask. first error data of the third set of indicia and the first set of indicia, and second error data of the third set of indicia and the second set of indicia are measured and obtained; An average correction error is calculated from the first error data and the second error data, and an exposure parameter of the third layer mask is corrected using the average correction error. The scheme provided by the invention improves the technical problem that the engraving error of the existing multi-layer mask engraving is large, and the alignment yield of the multi-layer mask engraving is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a photolithography method, a mask and a photolithography system. Background technique [0002] With the complexity of semiconductor devices, the semiconductor process is also becoming more and more complex, and multi-layer mask overetching is often required for device preparation. In the process of overlay engraving, it is difficult to avoid the deviation of the position of the pattern, resulting in overlay error. [0003] Over-etching errors will lead to a decrease in yield, and will also bring reliability hazards to the fabricated devices. It can be seen that reducing the overlay error between the overlays of the multi-layer masks is a technical problem that needs to be solved urgently. SUMMARY OF THE INVENTION [0004] By providing a photolithography method, a mask and a photolithography system, the present invention improves the technical problem of large...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F9/00G03F1/42
CPCG03F1/42G03F7/70616G03F9/7023G03F9/708G03F9/7088
Inventor 马琳陆原
Owner 赛莱克斯微系统科技(北京)有限公司
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