Unlock instant, AI-driven research and patent intelligence for your innovation.

Heat dissipation device and laser module for semiconductor laser

A heat dissipation device and laser technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve problems such as the reduction of parameters such as polarization, the thermal stress of chips, and the limitation of application range, so as to achieve improved heat dissipation, increased flow rate, and junction temperature. uniform effect

Active Publication Date: 2020-08-18
FOCUSLIGHT TECH
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The semiconductor laser bar chip is composed of multiple light-emitting points. When QCW long pulse width or CW high-power output is performed, the thermal crosstalk between the light-emitting points is very obvious, resulting in inconsistent junction temperatures of different light-emitting points, generally the junction temperature of the middle area of ​​the chip Higher than the junction temperature on both sides of the chip; For horizontal array semiconductor lasers, the thermal crosstalk between different chips is more obvious, especially for chips located in the middle of the horizontal array, the junction temperature is significantly higher than that on both sides, and different junction temperatures will cause The following problems: 1) The service life of each light-emitting point or chip is different; 2) Thermal stress is generated inside the chip, resulting in a decrease in parameters such as polarization; 3) The output power and central wavelength of each light-emitting point or chip are different, resulting in the overall failure of the chip or array product. The spectrum is very wide, which has great limitations on the application range
[0003] At present, the main ways to solve the inconsistent chip junction temperature are: (1) Use a microchannel structure with smaller channels for a single chip to improve the overall heat dissipation capacity of the chip or array to reduce the junction temperature difference. This method will lead to microchannel and heat sink processing. (2) Adjust the size or structure of the cooling channel at different positions of the chip or array product, so that the pressure drop of each channel can be controlled to achieve uniformity of heat dissipation. This method has very strict requirements on the shape of the water inlet channel. Now It is difficult to achieve the result required by the design with processing ability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heat dissipation device and laser module for semiconductor laser
  • Heat dissipation device and laser module for semiconductor laser
  • Heat dissipation device and laser module for semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] The technical scheme of the present invention is described below in conjunction with accompanying drawing:

[0029] The heat dissipation device proposed by the present invention for semiconductor lasers includes a heat dissipation substrate 1; as figure 1 As shown, one end of the heat dissipation substrate 1 is the chip mounting area 11, which is the bonding area of ​​the laser chip; specifically, the above heat dissipation substrate 1 is specifically a heat sink, and the material is copper, or steel, o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a heat dissipation device for a semiconductor laser and a laser module using the heat dissipation device, the heat dissipation device comprises a heat dissipation base, the heatdissipation base is an integral heat sink with a layered structure, comprises a bottom-up mechanical assembly layer, a buffer layer, an inlet liquid layer, a separation layer, an outlet liquid layerand a heat dissipation layer, wherein the cooling liquid firstly cools the heat crosstalk seriously and the middle part with high junction temperature and then cools the two sides of the chip with lowjunction temperature after the temperature rises, thereby improving the junction temperature uniformity of each laser chip of the horizontal semiconductor laser array.

Description

technical field [0001] The invention belongs to the field of semiconductor device packaging, in particular to a heat dissipation device for semiconductor lasers and a laser module using the heat dissipation device. Background technique [0002] Horizontal array semiconductor lasers are widely used in the fields of pumping and industrial processing. This structure is a horizontal array high-power semiconductor laser disclosed in patent CN201520603725.X. Generally, several laser bar chips are arranged horizontally in sequence, so that the emitted laser is a linear flare. The semiconductor laser bar chip is composed of multiple light-emitting points. When QCW long pulse width or CW high-power output is performed, the thermal crosstalk between the light-emitting points is very obvious, resulting in inconsistent junction temperatures of different light-emitting points, generally the junction temperature of the middle area of ​​the chip Higher than the junction temperature on bot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/024
CPCH01S5/02423
Inventor 王欢贾阳涛梁雪杰王警卫刘兴胜
Owner FOCUSLIGHT TECH