Unlock instant, AI-driven research and patent intelligence for your innovation.

A wafer structure and testing method thereof

A test method and wafer technology, applied in the direction of testing semiconductor materials, semiconductor/solid-state device testing/measurement, measuring devices, etc., can solve the problems that affect the accuracy of test results, oxidative environment setting errors, high development and debugging costs, etc., to achieve reduction Effects of testing time and cost, reducing time and cost, and reducing errors in test results

Active Publication Date: 2019-05-31
BRIGHTINTELLIGENCE TECH ZHONGSHAN CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of debugging method has the following problems: this kind of debugging method can only obtain the oxidation data of one metal content of the power device in a single debugging, but in the development and debugging process before mass production, it often needs dozens of In the development and debugging process, it is necessary to conduct multiple tests and consume tens to hundreds of epitaxial wafers of the power device
Its development and debugging costs are high and it takes a long time
At the same time, due to the large number of tests that need to be carried out, there may be errors in the setting of the oxidation environment during the multiple tests, which will affect the accuracy of the test results

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A wafer structure and testing method thereof
  • A wafer structure and testing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] HEMTs and VCSELs are commonly used power devices. During their fabrication, an epitaxial layer with high aluminum content needs to be oxidized by wet oxygen. Depending on the structure, the oxidation depth ranges from a few microns to more than ten microns. In the oxidation process, the oxidation depth is required to be precisely controllable and repeatable. In this embodiment, the GaAs material is doped with aluminum at different concentrations to form metal layers 113 containing aluminum at different concentrations, and the aluminum content ranges from 92% to 98%. Such as figure 1 As shown, a multi-layer metal layer 113 is grown layer by layer on a GaAs substrate 110, and the aluminum content of the metal layer 113 is 98%, 97%, 96%, 95%, 94% along the direction away from the substrate 110. %, 93%, 92%, a total of seven metal layers 113 are formed. The doped carriers, concentration and thickness of the metal layer 113 are consistent with those of real power devices. ...

Embodiment 2

[0028] The concept of the present invention is also applicable to testing the oxidation speed of real power devices with different thicknesses. When the thickness of the real power device to be tested is different, the thickness of the metal layer 113 can be set according to the thickness of the real power device, and then the oxidation speed of the metal layer 113 with various thicknesses can be obtained at the same time, which also has the advantages of reducing development and debugging costs and improving The effect of test result accuracy.

[0029] A test method for testing the wafer structure, comprising the following steps:

[0030] Firstly, the side surface of the metal layer 113 is exposed by dry etching. The etched wafer structure 100 is placed in the furnace tube 4 . The wafer structure 100 is then subjected to wet oxidation. Such as figure 2 As shown, the nitrogen gas passes through the mass flow meter 1 to control its feeding amount, then passes through the w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a wafer structure and a testing method thereof, which include stacked substrates and epitaxial layers; the epitaxial layers include multiple metal layers and separation layers arranged at intervals; the advantage is that: on a wafer structure By setting up multiple metal layers with different metal contents, the oxidation data of multiple metal layers can be obtained simultaneously through one test, and then the oxidation data of multiple metal contents of the power device can be obtained, which greatly reduces the time and cost required for debugging; due to Obtaining oxidation data of multiple metal layers simultaneously in the same oxidation environment improves the uniformity of the oxidation environment, reduces possible test result errors caused by oxidation environment setting errors, and improves the accuracy of the test results.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a wafer structure and a testing method thereof. Background technique [0002] In the production process of power devices such as IGBT, HEMT, VCSEL, and high-power LED, the metal in the wafer is usually oxidized to limit the injection of current, so as to improve the efficiency of power devices. When mass producing power devices, it is necessary to develop and debug the oxidation process. The development and debugging process of the existing oxidation process is to use multiple epitaxial wafers of the power device to carry out multiple oxidation tests, and each epitaxial wafer is provided with a metal layer with different metal content to obtain oxidation of the power device with different metal content. data. This kind of debugging method has the following problems: this kind of debugging method can only obtain the oxidation data of one metal content of the power device in a single deb...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544G01N33/00
CPCH01L22/30H01L22/32G01N33/00G01N33/0095
Inventor 罗玉辉陈柱元程元红邝智豪黄逸生
Owner BRIGHTINTELLIGENCE TECH ZHONGSHAN CO LTD