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A method for reducing the impurity content of CVD synthetic diamond

A technology for synthesizing diamond and impurity content, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of inability to solve the impurity atoms of the substrate, reduce the quality of diamond synthesis, etc., and achieve stable growth for a long time. , Improve growth effect, reduce cost effect

Active Publication Date: 2022-03-18
CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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Problems solved by technology

[0005] Aiming at the problem that the quality of diamond synthesis cannot be solved by substrate impurity atoms in the prior art, the present invention provides a method for reducing the impurity content of CVD synthetic diamond, which effectively reduces the influence of substrate impurity atoms on the quality of diamond synthesis

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  • A method for reducing the impurity content of CVD synthetic diamond
  • A method for reducing the impurity content of CVD synthetic diamond
  • A method for reducing the impurity content of CVD synthetic diamond

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Embodiment Construction

[0041] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present invention will be further described in detail below in conjunction with specific embodiments and according to the accompanying drawings. It should be noted that, in the drawings or descriptions in the specification, the content not described and some English abbreviations are the content well known to those of ordinary skill in the art. Some specific parameters given in this embodiment are only for demonstration, and the values ​​may be correspondingly changed to appropriate values ​​in different real-time manners.

[0042] This embodiment discloses a method for reducing the impurity content of CVD-synthesized diamond, the method is mainly by setting a polycrystalline diamond coating on the substrate and covering the substrate with diamond to prevent the introduction of impurity atoms caused by etching of the substrate .

[0043] The thickness of the polycrys...

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Abstract

The invention provides a method for reducing the impurity content of CVD synthetic diamond. A polycrystalline diamond coating is arranged on a substrate, and the substrate is covered with diamond to prevent the introduction of impurity atoms caused by etching of the substrate. Due to the deposition of polycrystalline diamond film on the surface of the substrate, the contact between the diamond seed crystal and the heterogeneous substrate is blocked, the impurity atoms of the substrate are effectively isolated, and the synthesis quality of single crystal diamond is improved; The coating increases the roughness of the substrate surface, so it plays a significant role in fixing the position of the diamond seed crystal. It can maximize the use of limited space, synthesize as many single crystal diamonds as possible, and reduce costs; due to polycrystalline diamond The thermal conductivity of the coating of the material is very high, which increases the temperature uniformity between the diamond seed crystals and is more conducive to the stable growth of single crystal diamond for a long time. The invention is applied to the field of diamond synthesis.

Description

technical field [0001] The invention relates to the field of diamond synthesis, in particular to a method for reducing the impurity content of CVD synthetic diamond. Background technique [0002] Diamond has attracted everyone's attention due to its excellent physical and chemical properties. However, natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure (HPHT), hot wire chemical vapor deposition (HJCVD), microwave plasma chemical vapor deposition (MPCVD). Among them, the microwave plasma chemical vapor deposition (MPCVD) synthetic diamond method is the most effective method for synthesizing high-quality, large-area diamond because there is no introduction of impurities. Schematic diagram of the synthesis of diamond by Microwave plasma chemical vapor deposition (Microwave plasma chemical vapor deposition) figure 1 shown. [0003] The quality of diamond synthesized by MPCVD is relat...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/04C30B25/18C30B28/14
CPCC30B25/186C30B28/14C30B29/04
Inventor 黄翀彭国令
Owner CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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