Method for rapidly detecting silicon crystal defects on semiconductor wafer substrate

Abstract

The invention discloses a method for rapidly detecting silicon crystal defects on a semiconductor wafer substrate. The method includes the steps: cutting a semiconductor wafer to prepare a test sample; soaking the test sample into hydrofluoric acid solution to strip all material layers except for polycrystalline silicon on the substrate; etching and removing the polycrystalline silicon on the substrate by mixed acid solution; soaking the substrate into 'smart etching' solution to scratch the silicon crystal defects on the substrate; checking the silicon crystal defects on the substrate and taking optical microphotographs or scanning electron microphotographs. A complete test sample treatment method is built, particularly, before the silicon crystal defects on the substrate are scratched bythe 'smart etching' solution, all materials on an upper layer of the silicon substrate are thoroughly stripped, so that the substrate is fully naked and then subjected to 'smart etching', good etching effects are achieved, artificial defect illusion caused by incomplete stripping of the materials on the upper layer of the substrate is avoided, and accurate and good-repeatability scratching results are acquired.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a rapid detection method for silicon crystal defects on a semiconductor wafer substrate. Background technique [0002] In the manufacture of semiconductor wafer discs, silicon crystal defects on the substrate directly affect the yield of wafers. Therefore, in failure analysis, failure analysis engineers need to discover silicon crystal defects on the substrate and find out the causes of it, so as to improve the production process and increase the yield. [0003] However, in actual production, the current traditional method is to directly etch without removing the upper layer of the substrate material and polysilicon, but it is difficult to obtain a repeatable scribing result in this way, and some New defects will lead to subsequent false defects, which will affect the judgment of the cause of defects. Contents of the invention [0004] The invention provides a rapid...

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Problems solved by technology

[0003] However, in actual production, the current traditional method is to directly etch without removing the upper layer of the substrate material and polysilicon, but it is difficult to obtain a repeatable scribing result in this way, and some New defects lead to subsequent false defects, which in turn affects the judgment of the cause of the defect

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