A low-temperature one-step method for preparing single-layer molybdenum sulfide/tungsten sulfide in-plane heterojunction
A heterojunction, low-temperature technology, applied in the field of growth, can solve problems such as obstacles, achieve the effect of reducing the experimental process, reducing experimental energy consumption, and avoiding the introduction of impurities
Active Publication Date: 2021-01-15
HEBEI UNIV OF TECH
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Although graphene has very good physical, chemical and mechanical properties, its practical application is severely hindered due to its lack of a band gap.
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[0011] The present invention is a kind of MoS 2 / WS 2 Methods for the preparation of heterojunctions. Compared with the traditional two-step growth method, the present invention uses a one-step growth method at low temperature, which simplifies the experimental process. Combined with the multi-element phase diagram of the precursor, the mixing of multiple precursors can greatly reduce the melting point, so that the preparation of the heterojunction can be formed at a lower temperature than the traditional method, reducing the energy consumption of the experiment, and is a two-dimensional material heterogeneous The growth of knots provides a reliable method. The present invention is further illustrated in detail below in conjunction with specific examples.
[0012] Using SiO 2 / Si as the substrate, first cut it into a shape of 1cm×1cm, then put it into the prepared piranha solution for 30min ultrasonic, take it out and clean it, then put it into acetone for 30min ultrasonic...
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The invention relates to a low-temperature one-step method for preparing an in-plane heterojunction of monolayer MoS2 / WS2. The method is suitable for preparing two-dimensional transition metal sulfideheterojunctions. The method comprises the steps that a precursor is prepared in proportion and the heterostructure is prepared by a chemical vapor deposition (CVD) method; the optimum ratio of each component in the precursor and the minimum temperature required for the reaction are determined by a phase diagram; and a growing heterojunction is obtained by the chemical vapor deposition method in an inch CVD tube furnace. The experimental process is greatly simplified by the one-step growth at low temperature, the reaction temperature of heterojunction formation is reduced, and the experimentalenergy consumption is greatly reduced, so that a convenient-to-implement and reliable method for the preparation of the two-dimensional transition metal sulfide heterojunctions is provided, and has the far-reaching significance in the field of heterojunction growth.
Description
technical field [0001] The invention relates to the field of growth technology, and belongs to the material preparation of two-dimensional transition metal sulfide heterojunction. Background technique [0002] Since graphene was prepared, two-dimensional nanomaterials have attracted great interest in this class of materials due to their applications in nanodevices. Although graphene has very good physical, chemical, and mechanical properties, its practical application is severely hindered due to its lack of a band gap. In recent years, two-dimensional semiconducting transition metal dichalcogenides (TMDs) material systems, including MX 2 (M=Mo, W; X=S, Se), has attracted much attention for its unique structure and remarkable physical and chemical properties. The representative material of two-dimensional transition metal sulfide is MoS 2 , unlike graphene without a band gap, MoS 2 It is a semiconductor that can realize bandgap control according to the number of layers. ...
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IPC IPC(8): C23C16/30
CPCC23C16/305
Inventor 陶俊光于宸崎陈磊陈士强关丽秀陈贵锋
Owner HEBEI UNIV OF TECH