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cmos-tdi image sensor and method of forming the same

A technology for image sensors and pixel areas, applied in semiconductor devices, electric solid-state devices, radiation control devices, etc., can solve problems such as increased noise in the voltage domain and poor performance

Active Publication Date: 2021-01-22
北京诚博锐芯科技有限公司
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The output voltage signals of all M rows are accumulated. For an M-class TDI image sensor, the signal is increased by M times, but the noise in the voltage domain is also increased.
[0005] However, the performance of existing CMOS-TDI image sensors is still poor

Method used

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  • cmos-tdi image sensor and method of forming the same
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  • cmos-tdi image sensor and method of forming the same

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Embodiment Construction

[0024] As mentioned in the background, the CMOS-TDI image sensor has poor performance.

[0025] figure 1 It is a schematic diagram of the structure of a CMOS-TDI image sensor.

[0026] Please refer to figure 1 , The CMOS-TDI image sensor includes: a substrate 100 including several pixel areas A; a channel 101 located in each of the pixel areas A; a gate structure 102 located on the surface of the channel 101 .

[0027] In the above CMOS-TDI image sensor, the channel 101 generally includes a surface channel and a buried channel. Wherein, the forming method of the surface type channel includes: when a voltage is applied to the gate structure 102, since the potential on the gate structure 102 is relatively high, electrons tend to gather at a place with a high potential, and in the substrate 100 More holes are generated, that is, a surface-type channel is formed in the substrate 100 at the bottom of the gate structure 102 . There are first ions in the substrate 100 of the pixe...

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Abstract

The invention relates to a CMOS-TDI image sensor and a formation method thereof. The CMOS-TDI image sensor comprises a substrate, a first channel, a first gate structure and a second gate structure, wherein the substrate comprises a first region and a second region which are adjacent to each other, first ions are arranged in substrate at the first region and the second region, the first channel isarranged in the substrate at the first region, second ions are arranged in the first channel, conductive types of the second ions and the first ions are opposite to each other, the first gate structure is arranged on a surface of the first channel, and the second gate structure is arranged on a surface of the substrate at the second region. The CMOS-TDI image sensor is relatively high in charge reading-out efficiency and relatively small in dark current.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a CMOS-TDI image sensor and a forming method thereof. Background technique [0002] A Time Delay Integration (TDI) image sensor is an evolution of a linear image sensor. The imaging mechanism of the time-delay integral image sensor is to expose the pixels passed by the object one by one, and accumulate the exposure structure, so as to solve the problem of weak imaging signal caused by insufficient exposure time of high-speed moving objects. The time-delay integral image sensor can increase the effective exposure time and improve the image signal-to-noise ratio. [0003] There are two types of time-delay integral image sensors, CCD and CMOS. However, due to the particularity of the CCD process, it is impossible to integrate other processing circuits in the image sensor, and the versatility and flexibility are poor. [0004] Another type of TDI image sensor is a CMOS type. This TDI...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14605H01L27/14616H01L27/14689
Inventor 王林黄金德
Owner 北京诚博锐芯科技有限公司