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Method for processing a layer structure and microelectromechanical component

A technology for processing layers, electrical devices, applied in the process of producing decorative surface effects, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc.

Active Publication Date: 2019-03-05
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Here, for example, it can be difficult to produce cavities for microstructures in a sufficient quality and at the same time in an economically viable manner by means of conventional methods or process sequences.

Method used

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  • Method for processing a layer structure and microelectromechanical component
  • Method for processing a layer structure and microelectromechanical component
  • Method for processing a layer structure and microelectromechanical component

Examples

Experimental program
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Effect test

Embodiment approach

[0043] According to various implementations, the cover layer 110 may be formed (eg, directly) over the liner layer 108 . According to various embodiments, the capping layer 110 may be formed by means of chemical or physical vapor deposition, such as by means of PE-CVD, LP-CVD, SA-CVD, ALD, RTO, thermal evaporation, laser deposition, cathode sputtering, and the like.

[0044] According to various embodiments, the remaining space in the corresponding opening 106h may be filled by means of the cover layer 110 . Furthermore, the cover layer 110 can also be formed over the first side 106a of the second layer 106 (ie the surface facing away from the sacrificial layer 104) and optionally partially or completely cover the backing layer 108, for example as in Figure 1C as well as Figure 2B The schematic side view or cross-sectional view shown in.

[0045] According to various embodiments, the liner layer 108 may have an undoped oxide material, such as undoped silicon oxide (also kn...

example 1

[0135] Example 1 is a method comprising: forming a layer structure 100 having a first layer 102, a sacrificial layer 104 disposed over the first layer, and a second layer 106 disposed over the sacrificial layer, wherein the second layer 106 having at least one opening 106h, wherein the at least one opening 106h extends from the first side 106a of the second layer 106 to the sacrificial layer 104; forming a liner layer 108 covering at least one inner wall 106w of the at least one opening 106h; in the liner layer 108 to form a capping layer 110, wherein the capping layer 110 at least partially extends into at least one opening 106h; A cavity 104 g is formed between the first layer 102 and the second layer 106 , wherein the etching rate of the etchant for the liner layer 108 is greater than that for the covering layer 110 .

[0136] Alternatively, Example 1 is a method for processing a carrier, the method comprising: forming a layer structure 100 having a first layer 102, a sacri...

Embodiment 13

[0151] Embodiment 13 is a microelectromechanical device 400, which has: a first layer 102 and a second layer 106 disposed on the first layer 102, wherein a cavity 104g is provided between the two layers 102, 106, and wherein the second The second layer 106 has a contact region 100k; a liner layer 108, which is disposed in the contact region 100k above the second layer 106, wherein the liner layer 108 has an undoped oxide material, and wherein the liner layer 108 has a thickness less than 50nm (eg less than 40nm or less than 30nm) layer thickness; cover layer 110, which is arranged in the contact region 100k above the pad layer 108, wherein the cover layer 110 has a doped oxide material, and wherein the layer thickness of the cover layer 110 Greater than the layer thickness of the liner layer 108, wherein the contact hole 424 extends through the liner layer 108 and the cover layer 110 to the second layer 106 to contact the surface portion 406a of the second layer 106; the conduc...

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Abstract

In accordance with various embodiments, a method for processing a layer structure is provided, wherein the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, wherein the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as thesacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, wherein the cover layer extendsat least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, wherein the etching solution has agreater etching rate for the liner layer than for the cover layer.

Description

technical field [0001] Various embodiments relate to a method for processing a layer structure and a microelectromechanical component. Background technique [0002] In general, various microstructured modules can be produced using semiconductor technology or other technologies. For example, microstructured modules have various application possibilities, for example as sensors, actuators, filters, etc. Microstructures (eg, having structure widths in the micron range or less) can also be fabricated in conjunction with associated electrical structures. As long as the mechanical properties of the microstructure can be utilized, such as vibration, extension, etc., this microstructure can be called a micromechanical structure. Together with the electrical structure used to operate the micromechanical structure (eg for power supply, reading, etc.), it may be referred to as a so-called microelectromechanical system (MEMS) or microelectromechanical device. In this case, it may be ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B7/02
CPCB81B7/02B81C1/00047B81C1/00539B81C1/00571B81C1/00476B81C1/00595H01L21/76846H01L21/76829H01L21/76865H01L21/30604B81B7/0006B81B7/0009B81C1/00246
Inventor A·布罗克迈尔W·弗里萨D·莫勒
Owner INFINEON TECH AG
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