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Semiconductor device and forming method therefor

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as pattern defects, unqualified patterns, and poor swing resistance

Active Publication Date: 2019-03-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] As the dimensions of integrated circuits continue to shrink, high aspect ratio (aspectratio) stacking of layers used in photopatterning techniques can lead to poor wiggle resistance during pattern transfer to amorphous silicon substrates
Wire wiggle can in turn lead to pattern defects
Pattern defects and wire wobble can cause metal pattern wire breakage and result in pattern failure

Method used

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  • Semiconductor device and forming method therefor
  • Semiconductor device and forming method therefor
  • Semiconductor device and forming method therefor

Examples

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Embodiment Construction

[0013] The following disclosure provides many different embodiments, or examples, for implementing various features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, forming a first feature on or over a second feature may include an embodiment in which the first and second features are formed in direct contact, or may include an embodiment in which the first and second features are formed in direct contact. Additional features may be formed therebetween such that the first and second features may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and / or letters in various examples. This repetition is for purposes of simplicity and clarity, and does not in itself require a relationship between the various embodiments and / or configurations discussed. ...

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Abstract

The invention relates to a semiconductor device and a manufacturing method therefor, and discloses a method for reducing wiggling in a line includes forming a silicon patterning layer over a substrateand depositing a mask layer over the silicon patterning layer. The mask layer is patterned to form one or more openings therein. The mask layer is thinned and the one or more openings are widened, toprovide a smaller height-to-width ratio. The pattern of the mask layer is then used to pattern the silicon patterning layer. The silicon patterning layer is used, in turn, to pattern a target layer where a metal line will be formed.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices and methods of forming the same, and more particularly to reduction of wire wiggling. Background technique [0002] To form integrated circuits on a wafer, a photolithographic process is thus used. A typical photolithography process involves applying photoresist and setting a pattern on the photoresist. The pattern in the patterned photoresist is set in the lithography mask and is set by transparent or opaque portions in the lithography mask. The pattern in the patterned photoresist is then transferred to the underlying features by an etching step, where the patterned photoresist is used as an etch mask. After the etching step, the patterned photoresist is removed. [0003] As the dimensions of integrated circuits continue to shrink, high aspect ratio (aspectratio) stacking of layers used in photopatterning techniques can lead to poor wiggle resistance during pattern transfer to am...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/528
CPCH01L21/76816H01L23/5283H01L2221/101H01L21/0337H01L21/31138H01L21/31144H01L21/32137H01L21/32139H01L21/3086H01L21/76832H01L21/76834H01L23/5226H01L23/528H01L21/76877H01L21/76807
Inventor 林建宏范振礼陈志壕
Owner TAIWAN SEMICON MFG CO LTD