Low-temperature preparation method of silicon-rich silicon nitride film

A technology of silicon-rich silicon nitride and silicon nitride, which is applied in the field of low-temperature preparation of silicon-rich silicon nitride films, can solve the problems of depositing low-stress, corrosion-resistant silicon-rich silicon nitride films, etc., and achieve the effect of increasing applicability

Inactive Publication Date: 2019-03-08
SUN YAT SEN UNIV
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Problems solved by technology

[0004] In order to solve the problem in the prior art that it is difficult to deposit a low-stress, high-corrosion-resistant silicon-rich silicon nitride film on a temperature-sensitive substrate material, the invention provides a low-temperature preparation method for a silicon-rich silicon nitride film

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Embodiment Construction

[0019] The accompanying drawings are for illustrative purposes only and cannot be construed as limiting the patent;

[0020] In order to better illustrate this embodiment, some parts in the drawings will be omitted, enlarged or reduced, and do not represent the size of the actual product;

[0021] For those skilled in the art, it is understandable that some well-known structures and descriptions thereof may be omitted in the drawings.

[0022] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0023] like figure 1 As shown, the devices used in the low-temperature preparation method of silicon-rich silicon nitride thin films in the present invention include: 1 is a substrate; 2 is vacuum grease, which is applied under the substrate 1 to transfer heat between the substrate 1 and the carrier; 3 is the lower electrode, which has a coolant pipeline, which is used to control the temperat...

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Abstract

The invention discloses a low-temperature preparation method of a silicon-rich silicon nitride thin film. The low-temperature preparation method of the silicon-rich silicon nitride thin film comprisessteps: step 1, providing a tray and a substrate, smearing vacuum grease at the lower side of the substrate, and pasting the substrate smeared with the vacuum grease on the tray; step 2, performing plasma surface processing on the substrate; and step 3, growing silicon nitride satisfying a preset Si/N content ratio on the substrate by employing an inductive coupling plasma chemical vapor deposition method. According to the preparation method, the inductive coupling plasma vapor deposition method is adopted, the growing speed, the reaction gas proportion, the airflow, the air pressure, and theplasma power are controlled, the silicon-rich silicon nitride thin film with low stress and high anti-corrosion is obtained, the problem that the high-temperature process in the conventional preparation method is difficult to be compatible with a CMOS is solved, and the adaptability of the process is improved.

Description

technical field [0001] The invention relates to the technical field of optoelectronic integrated device materials, in particular to a method for preparing a silicon-rich silicon nitride thin film at low temperature. Background technique [0002] Silicon nitride is a structural ceramic material with good dielectric properties, chemical stability, corrosion resistance, oxidation resistance, high insulation, and because of its easy processing and preparation, it is widely used in microelectronic integrated circuit technology. In contrast, silicon-rich silicon nitride (SiNx, x<1.33) has a greater nonlinear effect because the content of silicon atoms exceeds the stoichiometric ratio of silicon nitride itself, and the resulting material bandgap can be adjusted, so that The absorption coefficient is increased and the exciton lifetime is longer, leading to an increase in conversion efficiency. Therefore, the silicon-rich silicon nitride thin film used in silicon-based tandem sol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/0217H01L21/02274
Inventor 刘林陈钰杰张彦峰吴泽儒杨纯川余思远
Owner SUN YAT SEN UNIV
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