Method of preparing hole injection layer in organic light emitting diode based on collosol-gel method and constructed organic light emitting diode

A technology of light-emitting diodes and hole injection layers, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of low solubility, limited vanadium concentration, etc., achieve good repeatability, reduce potential barriers, and wide The effect of concentration tolerance

Active Publication Date: 2019-03-08
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, V 2 o 5 The powder is directly dissolved in water and its solubility is very low, which greatly limits the concentration of vanadium in the solution

Method used

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  • Method of preparing hole injection layer in organic light emitting diode based on collosol-gel method and constructed organic light emitting diode
  • Method of preparing hole injection layer in organic light emitting diode based on collosol-gel method and constructed organic light emitting diode
  • Method of preparing hole injection layer in organic light emitting diode based on collosol-gel method and constructed organic light emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] VO x Precursor preparation

[0043] according to Figure 8 As shown in the preparation procedure, the V 2 o 5 Disperse the powder evenly in water, take hydrochloric acid, divide the hydrochloric acid into two equal parts and add in two times, the time interval between the two additions is 10s, stir at 65°C until the color of the solution turns yellowish brown; then take hydrazine hydrate, add hydrazine hydrate Divide into two parts on average and add in two times, first add the first part of hydrazine hydrate, stir at 65°C until the color of the solution changes from yellowish brown to blue, then add the second part of hydrazine hydrate; finally add polyvinylpyrrolidone, at 65°C Stir for 2h to produce VO x precursor, where V 2 o 5 The molar ratio of powder, hydrochloric acid and hydrazine hydrate is 11:8.4:0.8, V 2 o 5 The mass ratio of powder and polyvinylpyrrolidone is 2:3.

Embodiment 2

[0045] VO x Precursor preparation

[0046] according to Figure 8 As shown in the preparation procedure, the V 2 o 5 Disperse the powder evenly in water, take hydrochloric acid, divide the hydrochloric acid into two equal parts and add in two times, the time interval between the two additions is 5s, stir at 70°C until the color of the solution turns yellowish brown; then take hydrazine hydrate, add hydrazine hydrate Divide into two parts and add in two times, first add the first part of hydrazine hydrate, stir at 70°C until the color of the solution changes from yellowish brown to blue, then add the second part of hydrazine hydrate; finally add polyvinylpyrrolidone, at 70°C Stir for 2.5h to produce VO x precursor, where V 2 o 5 The molar ratio of powder, hydrochloric acid and hydrazine hydrate is 9:9.5:0.9, V 2 o 5 The mass ratio of powder and polyvinylpyrrolidone is 1.5:6.

Embodiment 3

[0048] VO x Precursor preparation

[0049] according to Figure 8 As shown in the preparation procedure, the V 2 o 5 Disperse the powder evenly in water, take hydrochloric acid, divide the hydrochloric acid into two parts and add it twice, the time interval between the two additions is 20s, stir at 50°C until the color of the solution turns yellowish brown; then take hydrazine hydrate, add hydrazine hydrate Divide into two parts and add in two times, first add the first part of hydrazine hydrate, stir at 50°C until the color of the solution changes from yellowish brown to blue, then add the second part of hydrazine hydrate; finally add polyvinylpyrrolidone, at 50°C After stirring for 3h, VO x precursor, where V 2 o 5 The molar ratio of powder, hydrochloric acid and hydrazine hydrate is 12:8:0.7, V 2 o 5 The mass ratio of powder and polyvinylpyrrolidone is 2.5:2.

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Abstract

The invention relates to a method of preparing a hole injection layer in an organic light emitting diode based on a collosol-gel method, and a constructed organic light emitting diode, and belongs tothe technical field of basic electrical elements. The method mainly comprises the two technical links of preparation of VOx precursor liquid and preparation of the hole injection layer. Equipment usedin the method is simple; a synthesis technology is simple; the method is easy to operate and good in repeatability; and the VOx precursor liquid prepared in the method has the advantages of water solubility, wide concentration tolerance, stability, excellent film morphology and the like and can be used for constructing the high-performance visible light or ultraviolet organic light emitting diode.

Description

technical field [0001] The invention belongs to the technical field of basic electrical components, and in particular relates to a method for preparing a hole injection layer in an organic light emitting diode based on a sol-gel method and the constructed organic light emitting diode. Background technique [0002] Organic electronic devices including organic light-emitting diodes (OLEDs), organic solar cells, organic transistors, and organic detectors have attracted extensive attention due to their superior performance, large-scale production, mechanical flexibility, and slim portability. Interface engineering plays a key role in enabling multilayer structuring of organic electronic devices. For example, the prevailing energy-level mismatch between indium tin oxide (ITO) anodes and organics hinders carrier injection / extraction. The hole injection layer (HIL) sandwiched between the ITO and the organic hole transport layer (HTL) can effectively improve the interfacial contact...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K50/17H10K71/00
Inventor 张小文张岩李海鸥李皖蜀许积文王华
Owner GUILIN UNIV OF ELECTRONIC TECH
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