HEMT device containing high-dielectric coefficient medium block

Abstract

The invention discloses a HEMT device containing high-dielectric coefficient medium blocks, and belongs to the technical field of the semiconductor. The HEMT device comprises a substrate, a buffer layer, a barrier layer, a grid electrode, a source electrode and a drain electrode; the buffer layer and the barrier layer are orderly arranged on the substrate, and a two-dimensional conducting channelis formed at an interface of the barrier layer and the buffer layer; the source electrode and the drain electrode are respectively arranged at two sides of the HEMT device and form ohmic contact withthe two-dimensional conducting channel; the grid electrode is arranged between the source electrode and the drain electrode, and the grid electrode is located on the barrier layer and the Schottky contact is formed on the barrier layer; multiple high-dielectric coefficient medium blocks are arranged at a region between the grid electrode and the drain electrode on the barrier layer; multiple high-dielectric coefficient medium blocks are connected with the grid electrode and extend along a grid drain direction, the grid electrode and multiple high-dielectric coefficient medium blocks form a comb-finger shaped structure; the high-dielectric coefficient medium blocks do not directly connect with the drain electrode, and the dielectric coefficient is greater than the dielectric coefficient ofthe barrier layer. The HEMT device provided by the invention has the feature of being high in breakdown voltage, and can satisfy the application with high working voltage and output power.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to a high electron mobility transistor (HEMT), in particular to a HEMT device containing a high dielectric coefficient dielectric block. Background technique [0002] In the field of radio frequency and power integrated circuits, the frequency, withstand voltage, on-resistance and other characteristics of the device are important performance indicators that determine the characteristics of the circuit. The requirements for these features are also getting higher and higher. Among RF power devices, compared with other power devices, HEMT (High Electron Mobility Transistor) devices have the characteristics of ultra-high speed, low power consumption, and low noise (especially at low temperature), which greatly meets the needs of ultra-high-speed computers and Due to the special requirements of signal processing, satellite communication and other applications, HEMT devices are widel...

AI Technical Summary

Problems solved by technology

However, in the working state of the device, due to the concentrated electric field distribution between the gate and the drain, it is easy to generate an electric field peak in this area, resulting in a decrease in the breakdown electric field, which limits the maximum output power of the HEMT device

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