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Non-flickering quantum dot and preparation method thereof, and quantum dot light emitting diode

A quantum dot luminescence and quantum dot technology, which is applied in the direction of luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems that quantum dot light-emitting diodes cannot meet the application in the field of lighting

Active Publication Date: 2019-03-15
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the current quantum dot light-emitting diodes cannot meet the requirements of lighting applications.

Method used

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  • Non-flickering quantum dot and preparation method thereof, and quantum dot light emitting diode
  • Non-flickering quantum dot and preparation method thereof, and quantum dot light emitting diode
  • Non-flickering quantum dot and preparation method thereof, and quantum dot light emitting diode

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[0037] The present invention also provides the preparation method of described non-blinking quantum dots, comprising the following steps:

[0038] providing a dispersion of a core material, a dispersion of an inner shell material source, and a dispersion of an outer shell material source; the core material comprising CdSe or Cd m Zn 1-m Se, wherein, 0<m<1; the inner shell material source is a mixture of zinc source and selenium source; the outer shell material source is a mixture of zinc source and sulfur source, or a zinc oxygen source;

[0039] Under anaerobic conditions, the dispersion liquid of the inner shell material source is added dropwise to the dispersion liquid of the core material at a rate of 1-20 mL / h, and the in-situ growth on the surface of the core material The shell material is obtained from the dispersion liquid of the intermediate; the intermediate includes a core body and an inner shell layer coated on the surface of the core body;

[0040] Under anaerob...

Embodiment 1

[0079] Preparation of CdSe@8ZnSe-2ZnS:

[0080] Take 2×10 -7 Mmol, CdSe quantum dots with a particle size of 2.7nm were added to a mixed solution of 6mL octadecene and 6mL oleylamine to obtain a CdSe quantum dot solution;

[0081] Under nitrogen protection, the temperature was raised to 310°C at a speed of 18°C / min, and the liquid paraffin solution of zinc oleate (concentration was 0.1mmol / mL) and selenium powder (the mol ratio of zinc in zinc oleate and selenium powder was 1: 1) 8mL is added dropwise to the CdSe quantum dot solution at a rate of 4mL / h; after the dropwise addition, react for 1h to obtain an intermediate solution;

[0082] 5mL concentration of 0.1mmol / mL zinc oleate octadecane solution and 2mL octadecanethiol octadecadene solution were added dropwise to the intermediate solution; the rate of addition was 3mL / h; after the addition was complete, After reacting for 2 hours, a non-scintillation quantum dot solution was obtained.

[0083] Preparation of quantum d...

Embodiment 2

[0088] Preparation of CdSe@7ZnSe-1ZnO:

[0089] Take 2×10 -7 CdSe quantum dots with a particle size of 2.7nm in mmol and a particle size of 2.7nm were added to a mixed solution of 6mL octadecene and 6mL oleylamine to obtain a CdSe quantum dot solution; 0.1 solution of zinc oleate and selenium powder (the mol ratio of zinc in the zinc oleate and selenium powder is 1:1) 7mL is added dropwise in the described CdSe quantum dot solution, and the rate of addition is 4mL / h; , reacted for 1h to obtain an intermediate solution;

[0090] Add 2mL of liquid paraffin solution of zinc oleate with a concentration of 0.2mmol / mL and 1mL of octadecanethiol solution to the intermediate solution dropwise; the rate of addition is 3mL / h; after the addition is completed, the reaction After 1 h, a non-blinking quantum dot solution was obtained.

[0091] Preparation of quantum dot light-emitting diodes:

[0092] Treat the cleaned ITO glass substrate with a UV-ozone processor for 15 minutes, then s...

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Abstract

The invention provides a non-flickering quantum dot. The maximum brightness of a red light emitting diode prepared by using the non-flickering quantum dot is more than 180,000 cd / m<2>; the brightnessrange of a green light emitting diode is more than 200,000 cd / m<2>; the brightness range of a blue light emitting diode is more than 100,000 cd / m<2>; the current efficiency of the red light emitting diode is 15 to 40 cd / A, and the current efficiency of the green light emitting diode is 90 to 150 cd / A, and the current efficiency of the blue light emitting diode is 1 to 20 cd / A; the external quantumefficiency of the red light emitting diode is 18 to 30 percent; the external quantum efficiency of the green light emitting diode is 18 to 30 percent; and the external quantum efficiency of the bluelight emitting diode is 6 to 22 percent; the brightness ranges corresponding to the red, green, and blue light emitting diodes at the maximum current efficiency or the external quantum efficiency are70,000 to 100,000 cd / m<2>, 70,000 to 200,000 cd / m<2> and 3,000 to 40,000 cd / m<2>.

Description

technical field [0001] The invention relates to the technical field of electric quantum dots, in particular to a non-blinking quantum dot, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] Fluorescent quantum dots, especially II-VI semiconductor nanoparticles, are research hotspots in recent years. Fluorescence with different wavelengths can be produced by adjusting the size of quantum dots, which makes their potential applications in biomolecular labeling and immunodetection, light-emitting diodes, lasers, and solar cells attract much attention. Since a single quantum dot will blink when it is continuously excited, that is, the fluorescence will randomly switch between the bright state and the dark state (flickering) under continuous excitation and irradiation, which seriously affects the practical application of quantum dots. Effect. For example, the blinking of fluorescent quantum dots in the biological detection process ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88H01L51/50H01L51/54
CPCC09K11/02C09K11/883H10K50/115H10K2102/101H10K2102/00
Inventor 申怀彬杜祖亮李林松王书杰张彦斌
Owner HENAN UNIVERSITY