Storage device and manufacturing method thereof, and electronic equipment including storage device

Abstract

The invention discloses a storage device and a manufacturing method thereof, and electronic equipment including the storage device. According to the embodiment, the storage device comprises a substrate; an electrode structure arranged on the substrate, wherein the electrode structure comprises multiple first electrode layers and multiple electrode layers which are alternately stacked; multiple vertical active areas penetrating the electrode structure; a first grid medium layer arranged between the vertical active areas and multiple first electrode layers in the electrode structure; and a second grid medium layer arranged between the vertical active areas and multiple second electrode layers in the electrode structure, wherein the first grid medium layer and the second grid medium layer respectively construct data storage structures. A first effective work function of the combination of the first electrode layers and the first grid medium layer is different from the second effective work function of the combination of the second electrode layers and the second grid medium layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a storage device based on a vertical type device, a manufacturing method thereof, and an electronic device including the storage device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. [0003] Based on vertical type devices, three-dimensional (3D) memory devices such as flash memory (NAND type or NOR type) can be fabricated. Currently, as the number of layers in a 3...

AI Technical Summary

Problems solved by technology

Currently, as the number of layers in a 3D memory device increases, it has become increasingly difficult to further increase its integration density

In addition, it is difficult to reduce the source / drain resistance of the memory cell

As a result, the source / drain resistances of vertically stacked memory cells are connected in series, resulting in an increase in total resistance and poor performance of the memory device.

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