A gallium nitride-based light-emitting diode epitaxial wafer and its growth method
A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low electron and hole recombination efficiency, and the electron blocking layer is difficult to balance electron blocking and hole migration. Achieve the effects of weakening the blocking effect, preventing electron overflow, and increasing injection efficiency
Active Publication Date: 2020-04-07
HC SEMITEK SUZHOU
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Problems solved by technology
[0007] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its growth method, which can solve the problem that the electron blocking layer in the prior art is difficult to take into account the blocking of electrons and the migration of holes, resulting in the electrons and holes in the active layer The problem of low compounding efficiency
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[0028] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0029] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the GaN-based light-emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, an electron blocking layer 40 and a P-type semiconductor layer 50, an N-type semiconductor layer 20, an active layer 30, an electron blocking layer Layer 40 and P-type semiconductor layer 50 are sequentially stacked on substrate 10 .
[0030] figure 2 A schematic structural diagram of an active layer provided by an embodiment of the ...
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Abstract
The invention discloses a gallium nitride based light emitting diode epitaxial wafer and a growth method thereof, and belongs to the technical field of semiconductors. The gallium nitride based lightemitting diode epitaxial wafer comprises a substrate and an N-type semiconductor layer, an active layer, an electron blocking layer, and a P-type semiconductor layer sequentially stacked on the substrate, wherein the active layer comprises a plurality of periodic structures sequentially stacked, each of the periodic structures comprises quantum wells and quantum barriers stacked in sequence; the quantum barrier closest to the electron blocking layer comprises a plurality of composite structures stacked in sequence, each of the composite structures comprises a first sub-layer, a second sub-layer and a third sub-layer stacked in sequence, wherein the first sub-layer is made of un-doped aluminum gallium nitride, the second sub-layer is made of un-doped magnesium nitride, and the third sub-layer is made of un-doped gallium nitride. The invention can improve the injection efficiency of electrons and holes.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a growth method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor diode that can convert electrical energy into light energy. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substr...
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IPC IPC(8): H01L33/00H01L33/14H01L33/32
CPCH01L33/0075H01L33/145H01L33/32
Inventor 王曼李科韦春余陆香花周飚胡加辉
Owner HC SEMITEK SUZHOU