Mask blank, phase shift mask, half-tone mask, mask blank manufacturing method, and phase shift mask manufacturing method

Abstract

This mask blank is provided with: a transparent substrate; a phase shift layer laminated on the surface of the transparent substrate, said phase shift layer having Cr as a major component; an etchingstopper layer laminated on the phase shift layer; and a light blocking layer laminated on the etching stopper layer, said light blocking layer having Cr as a major component. The phase shift layer, the etching stopper layer, and the light blocking layer are etched using a same etchant, thereby enabling to manufacture a phase shift mask wherein an edge of a light blocking pattern formed in the light blocking layer is disposed, in a plan view, at a position retracted from an edge of a phase shift pattern laminated on the phase shift layer.

Description

technical field [0001] The present invention relates to a mask blank capable of forming a fine and high-precision exposure pattern, a phase shift mask, a halftone mask, a method for manufacturing a mask blank, and a method for manufacturing a phase shift mask. technology for the manufacture of flat panel displays. [0002] This application claims priority based on Patent Application No. 2017-126258 filed in Japan on June 28, 2017, the content of which is incorporated herein. Background technique [0003] In photolithography used for patterning of devices such as FPDs (Flat Panel Displays) and wiring, etc., a phase shift mask can be used as a photomask. A phase shift mask is an edge-enhanced mask in which a phase shift layer, an etch stop layer, and a light shielding layer are sequentially provided on the surface of a transparent substrate, and it can be used to make patterns finer. [0004] In addition, in the FPD mask, the number of masks required for panel formation is r...

AI Technical Summary

Problems solved by technology

If film formation and patterning are carried out alternately in this way, the transportation time between devices and processing waiting time will become longer, and the production efficiency will drop significantly.

Furthermore, the light-shielding layer and the phase shift layer cannot be continuously etched across a single mask having a predetermined opening pattern, and the mask (resist pattern) needs to be formed twice, increasing the number of manufacturing steps.

Therefore, there is a problem that phase shift masks cannot be manufactured with high mass productivity

[0007] In addition, simultaneous etching can be considered as being able to etch the light-shielding layer and the phase shift layer with the same etchant, but in this case, the amount of side etching in the light-shielding layer is not sufficient.

Therefore, there is a problem that the edge of the light-shielding pattern cannot be formed within a predetermined range in a dimension that recedes from the edge of the phase shift pattern in plan view.

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