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High-sensitivity sensor and preparation method thereof

A high-sensitivity, sensor technology, applied in the direction of instruments, thermometers, scientific instruments, etc., to achieve the effect of improving performance, broad application prospects, and improving sensitivity

Active Publication Date: 2019-03-19
武汉敏声新技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Load cells that are widely used today are also susceptible to varying accelerations due to gravity and air buoyancy

Method used

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  • High-sensitivity sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Such as figure 1 and 2 As shown, the high-sensitivity sensor 10 provided in the first embodiment includes a substrate 11 and a resonator 12 . The inside of the substrate 11 has a closed cavity 11a, and the cavity 11a is filled with nitrogen, and the pressure is less than a standard atmospheric pressure. The resonator 12 is formed on the substrate 11 and is a thin-film bulk acoustic resonator structure, which sequentially includes a bottom electrode 12a, a piezoelectric middle layer 12b, and an upper electrode 12c from bottom to top.

[0032] Such as figure 2 As shown, in the first embodiment, the patterned resonant portion 12 is circular.

Embodiment 2

[0034] Such as image 3 and 4 As shown, the high-sensitivity sensor 20 provided in the second embodiment includes a substrate 21 and a resonance part 22 . The substrate 21 has a closed cavity 21a inside, and the cavity 21a is filled with nitrogen, and the pressure is less than a standard atmospheric pressure. The resonator 22 is formed on the substrate 21 and is a high-frequency surface acoustic wave resonator structure, which includes bottom electrodes 22a, piezoelectric intermediate layers 22b, and interdigital electrodes 22c in order from bottom to top.

Embodiment 3

[0036] Such as Figure 5 and 6 As shown, the high-sensitivity sensor 30 provided in the third embodiment includes a substrate 31 and a resonance part 32 . The inside of the substrate 31 has a closed cavity 31a, and the cavity 31a is filled with nitrogen, and the pressure is less than a standard atmospheric pressure. The resonator part 32 is formed on the substrate 31 and is a ring resonator structure, which sequentially includes a bottom electrode 32a, a piezoelectric intermediate layer 32b, and an upper electrode 32c from bottom to top.

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PUM

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Abstract

The invention provides a high-sensitivity sensor and a preparation method thereof. The high-sensitivity sensor is characterized by comprising a substrate and a resonance part, wherein the inner portion of the substrate is provided with a closed cavity, the cavity is filled with inert gas, and the air pressure is less than 1atm; the resonance part is formed on the substrate, and the resonance partcomprises a bottom electrode, a piezoelectric interlayer and a top electrode or an interdigital electrode. According to the high-sensitivity sensor, when the ambient temperature changes, the volume ofthe inert gas inside the cavity can change with the temperature, thereby causing the strain deformation of the bottom electrode and piezoelectric interlayer of the resonance part, so that the frequency of the resonance part changes, and sensitive sensing can be achieved through the change of the detection frequency. The sensitivity of the sensor can be improved through the resonance part, therebyimproving the performance of the sensor.

Description

technical field [0001] The invention belongs to the field of sensor preparation, in particular to a high-sensitivity sensor and a preparation method thereof. technical background [0002] As a transducer that can realize the mutual conversion of mechanical energy and electrical energy, the sensor has been widely used in industrial production, space development, ocean exploration, environmental protection, resource investigation, medical diagnosis, bioengineering, and even the protection of cultural relics. . The temperature sensor is the earliest developed and most widely used type of sensor. The temperature sensor is a semiconductor device that uses the characteristics of NTC's resistance value changing with temperature to convert non-electrical physical quantities into electrical quantities, so that precise temperature measurement and automatic control can be performed. Most of the thermocouple sensors currently used have relatively low sensitivity, are easily affected b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K5/28G01K11/26
CPCG01K5/28G01K11/26
Inventor 刘婕妤邹杨高超周杰胡博豪刘炎孙成亮
Owner 武汉敏声新技术有限公司