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Application of metal ions in detection of polycrystalline silicon etching rate

A metal ion, etching rate technology, applied in the measurement device, color/spectral characteristic measurement, polarization influence characteristic, etc., can solve the problem of no patent report and so on

Inactive Publication Date: 2019-03-19
湖北兴福电子材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there is no patent report on the effect of metal ion impurities in electronic grade phosphoric acid on polysilicon etching rate. The present invention confirms the influence of metal ion impurities on polysilicon etching rate by adding metal salts in electronic grade phosphoric acid, and also provides a basis for the production of electronic grade phosphoric acid. The content of each metal ion impurity in the process provides an effective control range

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Weigh 700g of electronic grade phosphoric acid in a 1000mL quartz beaker, and weigh FeCl according to the Fe content of 1ppm 3 Add to phosphoric acid, ultrasonic dispersion makes FeCl 3 Completely dissolve in phosphoric acid, then heat the mixed phosphoric acid solution to 160°C, then put the 3cm x 3cm polycrystalline silicon sample into 160°C phosphoric acid to etch for 60 minutes, and use the ellipsometer to test the thickness of the polysilicon layer before and after the sample is etched, and calculate the etching rate.

Embodiment 2

[0021] Weigh 700g of electronic grade phosphoric acid in a 1000mL quartz beaker, and weigh FeCl according to the Fe content of 0.5ppm 3 Add to phosphoric acid, ultrasonic dispersion makes FeCl 3 Completely dissolve in phosphoric acid, then heat the mixed phosphoric acid solution to 160℃, then put the 3cm x 3cm polycrystalline silicon sample into 160℃ phosphoric acid to etch for 60 minutes, and use the ellipsometer to test the thickness of the polysilicon layer before and after the sample is etched, and calculate the etching rate .

Embodiment 3

[0023] Weigh 700g of electronic grade phosphoric acid in a 1000mL quartz beaker, and weigh FeCl with a Fe content of 0.1ppm 3 Add to phosphoric acid, ultrasonic dispersion makes FeCl 3 Completely dissolve in phosphoric acid, then heat the mixed phosphoric acid solution to 160℃, then put the 3cm x 3cm polycrystalline silicon sample into 160℃ phosphoric acid to etch for 60 minutes, and use the ellipsometer to test the thickness of the polysilicon layer before and after the sample is etched, and calculate the etching rate .

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Abstract

The invention discloses application of metal ions in the detection of polycrystalline silicon etching rate. A polycrystalline silicon etchant is electronic-grade phosphoric acid. Specifically, electronic-grade phosphoric acid produced in a same batch is used as an etchant, ensuring that initial metal impurities are of consistent type and content; a metal salt with different contents is added to the electronic-scale phosphoric acid to verify influence of the metal ion contents upon polycrystalline silicone etching rate; etching data of metal additives under same content and of different types is analyzed in the same way, so that influence degrees of different types of metal ions upon polycrystalline silicone etching rate are obtained. The application herein is of guidance significance to the control of metal impurity types and contents in the production process of semiconductor electronic-grade phosphoric acid.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor materials for integrated circuits, and specifically relates to a method for detecting metal ion impurities in electronic grade phosphoric acid on the etching rate of polysilicon, which can determine the degree of influence of the type and content of metal impurities in electronic grade phosphoric acid on the etching rate of polysilicon. Background technique [0002] Polysilicon thin films are widely used in semiconductor devices and integrated circuits, and can be used to make gate materials for MOS devices, sacrificial layer materials, solar cells and various optoelectronic devices. In integrated circuit manufacturing, the production of polysilicon gate structure is the most critical step in the process, because it includes the thermal growth of the thinnest gate oxide layer and the etching of the polysilicon gate, and the etching of the polysilicon gate is a physical part of the entire integrate...

Claims

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Application Information

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IPC IPC(8): G01N21/21G01N21/25
CPCG01N21/211G01N21/25G01N2021/213
Inventor 李少平贺兆波张庭冯凯尹印姜飞王书萍
Owner 湖北兴福电子材料股份有限公司