Flange and semiconductor power device
A technology for power devices and semiconductors, applied in the fields of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems of CTE mismatch and high structural cost, and achieve improved mechanical reliability, improved mechanical reliability, and improved Effects of CTE mismatch problem
Inactive Publication Date: 2019-03-19
HUAWEI MACHINERY
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[0005] However, the structural cost of the above scheme is very high, and there is a diamond thermal expansion coefficient CTE (3-5x10) in the middle position (32 positions). -6 / K) and the CTE of copper shown at position 16 (17x10 -6 / K) Mismatch problem, that is, the middle CTE does not match the surrounding CTE. When high temperature bonding is performed, the Cu material shown in position 16 is more obvious due to CTE thermal expansion, and CTE mismatch is prone to occur
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[0063] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of them. It should be noted that, based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0064] With the development of semiconductor power devices towards higher output power, the thermal power consumption of the internal chips can be as high as tens or even hundreds of watts, so there are also higher requirements for the heat dissipation performance and mechanical reliability of semiconductor packages. In the packaging structure of the RF power amplifier tube, the chip can be welded to the flange with hard solder....
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The embodiment of the invention provides a flange and a semiconductor power device. The flange comprises a flange body and an insert part; and the insert part is embedded into the upper end surface orlower end surface of the flange body and is embedded around the flange body. The insert part matches the shape of the end surface of the flange body; and the thermal expansion coefficient of the flange body is higher than the thermal expansion coefficient of the insert part. Therefore, the mechanical reliability of the flange structure is effectively improved; and a problem of CTE mismatching between the flange structure and the chip in the semiconductor power device and the integrated circuit board is solved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a flange, a semiconductor power device and an integrated circuit board. Background technique [0002] With the continuous evolution of communication technology, the base station has higher and higher requirements on the power, efficiency, bandwidth and other performance of the power amplifier. Si-based LDMOS is limited by frequency and power density, and its performance has basically reached its limit. In order to achieve a new level of power characteristics and meet the needs of future communications, GaN wide bandgap semiconductor power amplifiers have gradually become the mainstream choice for base station power amplifiers. Due to the characteristics of large bandgap width, high breakdown electric field strength, and high electron saturation velocity, gallium nitride wide bandgap semiconductor devices have unique advantages in power applications, and their power densit...
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IPC IPC(8): H01L23/13H01L23/31H01L23/367
CPCH01L23/13H01L23/3121H01L23/367H01L2224/48091H01L2224/73265H01L2224/48137H01L2924/16152H01L2924/00014
Inventor 袁昌发曹梦逸张宗民谢荣华
Owner HUAWEI MACHINERY