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Scandium-tantalum co-doped bismuth rubidium niobate piezoelectric ceramic material and preparation method thereof

A piezoelectric ceramic and co-doping technology, which is applied in the field of piezoelectric ceramic materials, can solve the problems that the piezoelectric performance cannot meet the application requirements and the piezoelectric constant is low, achieve good polarization effect, improve piezoelectric activity, and high Curie The effect of temperature

Inactive Publication Date: 2019-03-22
赵娟
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the piezoelectric constants of bismuth layered piezoelectric ceramic materials are generally low, such as the piezoelectric constant of bismuth sodium titanate is only 16 pC / N, when used at higher temperatures, its piezoelectric performance cannot meet the application Require

Method used

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preparation example Construction

[0033] The present invention also provides a preparation method of scandium-tantalum co-doped bismuth-rubidium niobate piezoelectric ceramic material, comprising the following steps:

[0034] (1) Select analytically pure or superior pure Bi 2 o 3 , Rb 2 CO 3 , Nb 2 o 5 、Sc 2 o 3 and Ta 2 o 5 , according to Bi 2.5 Rb 3.5 Nb 5-x (ScTa) 5x / 8 o 18 Calculate the mass of each raw material required by the general chemical formula, and accurately weigh it for future use, where the value of x is selected from any value between 0 and 0.1;

[0035] (2) Place the weighed raw materials in a planetary ball mill. The ball milling medium is anhydrous ethanol and zirconia balls. Ball milling is carried out at a rate of 280-320 rpm. The ball milling time is 14-18 hours. After the ball milling is completed, place the obtained ball milling mixture in a drying tray, and dry it at 80-90°C to constant weight;

[0036] (3) Press the dry material obtained after drying, press it into a r...

Embodiment 1

[0048] The preparation formula is Bi 2.5 Rb 3.5 Nb 4.98 (ScTa) 0.0125 o 18 Scandium-tantalum co-doped bismuth-rubidium niobate piezoelectric ceramic material.

[0049] Choose analytically pure or superior pure Bi 2 o 3 , Rb 2 CO 3 , Nb 2 o 5 、Sc 2 o 3 and Ta 2 o 5 , according to Bi 2.5 Rb 3.5 Nb 4.98 (ScTa) 0.0125 o 18 Calculate the mass of each raw material required by the general chemical formula, and weigh it accurately, and set aside; place each raw material weighed in a planetary ball mill, and the ball milling medium is absolute ethanol and zirconia grinding balls, according to 300 rpm The speed of ball milling is 10 minutes, and the ball milling time is 16 hours. After the ball milling is completed, the obtained ball milling mixture is placed in a drying tray, and dried at 85°C to constant weight; the dried material obtained after drying is pressed, pressed Form a rough billet with a diameter of 25 mm and a thickness of 5 mm, and then pre-fire the rou...

Embodiment 2

[0051] The preparation formula is Bi 2.5 Rb 3.5 Nb 4.95 (ScTa) 0.03125 o 18 Scandium-tantalum co-doped bismuth-rubidium niobate piezoelectric ceramic material.

[0052] Choose analytically pure or superior pure Bi 2 o 3 , Rb 2 CO 3 , Nb 2 o 5 、Sc 2 o 3 and Ta 2 o 5 , according to Bi 2.5 Rb 3.5 Nb 4.95 (ScTa) 0.03125 o 18 Calculate the mass of each raw material required by the general chemical formula, and weigh it accurately, and set aside; place each raw material weighed in a planetary ball mill, and the ball milling medium is absolute ethanol and zirconia grinding balls, according to 300 rpm The speed of ball milling is 10 minutes, and the ball milling time is 16 hours. After the ball milling is completed, the obtained ball milling mixture is placed in a drying tray, and dried at 85°C to constant weight; the dried material obtained after drying is pressed, pressed Form a rough billet with a diameter of 25 mm and a thickness of 5 mm, and then pre-fire the r...

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Abstract

The invention discloses a scandium-tantalum co-doped bismuth rubidium niobate piezoelectric ceramic material and a preparation method thereof. The scandium-tantalum co-doped bismuth rubidium niobate piezoelectric ceramic material has a chemical general formula of Bi2.5Rb3.5Nb5-x(ScTa)5x / 8O18, wherein the numerical value of x selected from any numerical values of 0-0.1. The preparation method of the scandium-tantalum co-doped bismuth rubidium niobate piezoelectric ceramic material comprises the following steps of: weighing raw materials, carrying out ball milling, pressing, pre-firing, carryingout ball milling for a second time, pelletizing, discharging adhesive and firing. After the scandium-tantalum co-doped bismuth rubidium niobate piezoelectric ceramic material is detected, the piezoelectric constant of the material is 42.4-48.1 pC / N; the Curie temperature of the material is 656-683 DEG C; the mechanical quality factor, the radial electromechanical coupling coefficient and the dielectric loss of the material are obviously improved; the material has a good application prospect in the high-temperature field; ceramic components prepared from the material can be assembled into various high-temperature sensors and have good application prospects in high-temperature measurement, detection and automatic control.

Description

technical field [0001] The invention belongs to the field of piezoelectric ceramic materials, in particular to a scandium-tantalum co-doped bismuth-rubidium niobate piezoelectric ceramic material and a preparation method thereof. Background technique [0002] Piezoelectric ceramics are a class of electronic ceramic materials with piezoelectric properties. The main difference between them and typical piezoelectric quartz crystals that do not contain ferroelectric components is that the crystal phases that constitute their main components are all ferroelectric crystal grains. . Since ceramics are polycrystalline aggregates with randomly oriented grains, the spontaneous polarization vectors of individual ferroelectric grains are also chaotically oriented. In order for the ceramics to exhibit macroscopic piezoelectric properties, it is necessary to place the piezoelectric ceramics under a strong DC electric field for polarization treatment after they are fired and coated with m...

Claims

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Application Information

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IPC IPC(8): C04B35/495C04B35/453C04B35/622C04B41/88
CPCC04B35/453C04B35/495C04B35/622C04B41/009C04B41/5116C04B41/88C04B2235/3201C04B2235/3224C04B2235/3251C04B2235/3298C04B2235/602C04B2235/656C04B2235/6567
Inventor 赵娟徐丽霞
Owner 赵娟
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