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Method and system for laser machining of wafer

A laser processing and laser technology, applied in laser welding equipment, metal processing equipment, manufacturing tools, etc., can solve the problems of laser follower oscillation error, large hysteresis response, wafer surface cutting, etc.

Active Publication Date: 2019-03-29
北京中科镭特电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the system is in high-speed reciprocating operation, the displacement speed of the laser head will not only produce a large hysteresis response, but also prone to problems such as step loss and processing position misalignment during the return process, which may eventually lead to laser processing at the edge of the processing path. surface, and the overlap of cutting lines with different cutting depths in stealth cutting
[0005] At the same time, because the existing laser cutting of wafers has high requirements on the consistency of the cutting depth, the precision is at least at the micron level, but high-speed cutting and the unevenness of the wafer surface constitute a pair of contradictory factors, and it is easy to cause focus under high-speed movement. The plane is separated from the wafer plane, and the breakpoint of the wafer surface cutting occurs, and the frequent update of the setting value of the laser follower will also cause the oscillation error of the laser follower

Method used

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  • Method and system for laser machining of wafer
  • Method and system for laser machining of wafer
  • Method and system for laser machining of wafer

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Embodiments of the present invention provide a method for laser processing wafers, such as figure 1 As shown, the method includes:

[0053] S11. Obtain the feedback time of the piezoelectric ceramic;

[0054] S12. Determine the sampling interval of the laser follower according to the feedback time of the piezoelectric ceramic, and then use the laser follower to measure and record height data according to the determined sampling interval to form height information;

[0055] S13. Real-time control of the piezoelectric ceramics with a feed-forward compensation mechanism according to the height information, and laser processing of the cutting lines.

[0056] The method for laser processing wafers provided by the embodiments of the present invention mainly compensates the slow response problem of piezoelectric ceramics (PZT) through the fast response capability of the controller; the specific technical solution is to match the optimal sampling time according to the feedback...

Embodiment 2

[0091] Due to the slow response of the laser servo device when the equipment is running at high speed, it cannot keep up with the change of the sample surface, and it is impossible to achieve the processing accuracy of ±1um from the change of the laser processing focus to the sample surface. Therefore, the embodiment of the present invention provides a method for laser processing wafers, such as Figure 5 As shown, the method includes:

[0092] S21. Obtain the height data of the cutting line to be processed by the laser follower;

[0093] S22. Perform data processing on the acquired height data according to the feedback time of the piezoelectric ceramics and form a positive and negative piezoelectric ceramic motion compensation table;

[0094] S23. When performing forward or reverse laser processing on the cutting line, the piezoelectric ceramics are controlled according to the forward and reverse piezoelectric ceramic motion compensation table to adopt a feedforward compensa...

Embodiment 3

[0131] Since the existing laser cutting of wafers has high requirements on the consistency of the cutting depth, the precision is at least at the micron level, but the high-speed cutting and the unevenness of the wafer surface constitute a pair of contradictory factors, and it is easy to cause the focus plane to be out of focus under the condition of high-speed movement On the wafer plane, there are breakpoints in the cutting of the wafer surface, and the frequent update of the setting value of the laser follower will also cause the oscillation error of the laser follower. Therefore, the embodiment of the present invention provides a kind of method for laser machining wafer, such as Figure 8 As shown, the method includes:

[0132] S31. Scanning the cutting line to be processed, and obtaining the height data of the cutting line by the laser follower;

[0133] S32. Fitting the height data to form a height curve of the cutting line;

[0134] S33. Determine the height setting v...

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PUM

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Abstract

The invention provides a method and system for laser machining of a wafer. The method comprises the steps of scanning a cutting way to be machined, and obtaining height data of the cutting way througha laser following device; fitting the height data to form a height curve of the cutting way; according to the height curve, determining height set value of the laser following device in the preset cutting distance, and according to the height set value of the laser following device, controlling piezoelectric ceramics to carry out laser machining on the cutting way in the preset cutting distance.It can be ensured that the distance between the laser focusing plane and the surface of the cutting way is always in micron order, and the process effect is not affected; and the phenomenon that the laser following device is in the vibration state at any time, and control error is caused can be avoided.

Description

technical field [0001] The invention relates to the technical field of laser processing, in particular to a method and system for laser processing wafers. Background technique [0002] In the field of semiconductor wafer processing, the industry's continuous improvement of new integrated circuit technology, product packaging capabilities, and chip performance requirements has led to thinner wafers, higher sensitivity of devices, and increasingly complex chip structures. The more complex the chip scribing process is, the more diverse the requirements are. For example, the structure of MEMS devices is very fragile, and the scribing process using high-pressure water cleaning is not allowed, nor is there any dust or particles on the surface; covered with Low -K medium chips are not allowed to peel off the film layer during scribing and also do not allow any dust or scribing debris on the surface. [0003] The first step in chip packaging is wafer dicing, and the effect of the w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/53B23K26/70B23K26/064B23K26/03
CPCB23K26/032B23K26/064B23K26/53B23K26/702
Inventor 李纪东侯煜李曼张喆王然张紫辰张昆鹏易飞跃杨顺凯
Owner 北京中科镭特电子有限公司