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Magnetoresistive element and electronic device

A magnetoresistive element and electrode technology, applied in the field of electronic equipment, can solve the problems of difficult to rewrite information, small current value tolerance of NMOS type FET, etc., and achieve the effects of avoiding high coercivity, improving coercivity, and improving crystal orientation.

Pending Publication Date: 2019-04-02
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when such information is rewritten in the bottom pinned structure, the current I 2 Flows from the selection transistor to the spin injection type magnetoresistance effect element, so there may be some cases where the tolerance on the current value of the NMOS type FET is small and it is difficult to rewrite the information (refer to Non-Patent Document 1)

Method used

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  • Magnetoresistive element and electronic device
  • Magnetoresistive element and electronic device
  • Magnetoresistive element and electronic device

Examples

Experimental program
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Effect test

Embodiment 1

[0030] 2. Embodiment 1 (Magnetoresistive element according to the first and second aspects of the present disclosure and the electronic device of the present disclosure)

Embodiment 2

[0031] 3. Embodiment 2 (modification of embodiment 1)

[0032] 4. Embodiment 3 (electronic equipment with the magnetoresistive element described in Embodiment 1 or Embodiment 2)

[0033] 5. Other

[0034]

[0035] In the magnetoresistive element according to the first aspect of the present disclosure and the magnetoresistive element included in the electronic device according to the first aspect of the present disclosure, the second ground layer may have in-plane magnetic anisotropy or be nonmagnetic .

[0036]In the magnetoresistive element including the above-mentioned preferred form according to the first aspect of the present disclosure, the magnetoresistive element included in the electronic device of the present disclosure including the above-mentioned preferred form according to the first and second aspects of the present disclosure, and the magnetoresistance element according to the first aspect of the present disclosure In the magnetoresistive element of the secon...

Embodiment 3

[0112] Embodiment 3 relates to an electronic device having the magnetoresistive element 10 or 10A described in Embodiment 1 or Embodiment 2, specifically, a magnetic head. The magnetic head can be applied to various electronic devices, electric devices, etc., such as hard disk drives, integrated circuit chips, personal computers, mobile terminals, mobile phones, and magnetic sensor devices.

[0113] As an example, Figure 6A and Figure 6B An example in which the magnetoresistive element 101 is applied to the composite magnetic head 100 is shown. Notice, Figure 6A is a schematic perspective view showing the composite magnetic head 100, a part of which has been cut to view the internal structure, Figure 6B is a schematic cross-sectional view of the composite magnetic head 100 .

[0114] The composite magnetic head 100 is a magnetic head used for a hard disk device or the like, and a magnetoresistive effect magnetic head having the magnetoresistive element 10 or 10A descri...

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Abstract

A magnetoresistive element 10 is obtained by laminating a lower electrode 31, a first base layer 21A formed of a non-magnetic material, a storage layer 22 having perpendicular magnetic anisotropy, anintermediate layer 23, a magnetization fixed layer 24 and an upper electrode 32. The storage layer 22 is formed of a magnetic material that has at least a 3d transition metal element and elemental boron in composition. This magnetoresistive element 10 additionally comprises a second base layer 21B between the lower electrode 31 and the first base layer 21A; and the second base layer 21B is formedof a material that contains at least one of the elements constituting the storage layer in composition.

Description

technical field [0001] The present disclosure relates to a magneto-resistive element, and more particularly, to a magneto-resistive element included in, for example, a memory element, and an electronic device having such a magneto-resistive element. Background technique [0002] In recent years, various types of storage devices have been used as cache memories and storage devices in information processing systems. Development of nonvolatile memories such as resistive RAM (ReRAM), phase change RAM (PCRAM) and magnetoresistive RAM (MRRAM) as next-generation memory devices has been ongoing. Among such nonvolatile memories, MRAM uses an element having a ferromagnetic tunnel junction (magnetic tunnel junction (MTJ) element; Attention has been paid to reasons such as an almost infinite number of rewrites, and a spin transfer torque-based magnetic random access memory ( STT-MRAM). [0003] A magnetoresistive element storing information includes, for example, a magnetic material ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8239G11B5/39H01F10/16H01F10/32H01L27/105H01L29/82H01L43/08H01L43/10H10N50/10H10N50/80
CPCG11C11/161G11B5/3909H01F10/3286H01F10/3272H01F10/30H01F10/132H10B61/22H10N50/10H10N50/85H01F10/131H01F10/14H01F10/16H01F10/32G11B5/39H10N50/80
Inventor 苅屋田英嗣
Owner SONY CORP