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Preparation process of a polysilicon film electrode

A polycrystalline silicon thin film and preparation process technology, which is applied in the direction of polycrystalline material growth, metal material coating process, crystal growth, etc. The effect of reducing production costs

Inactive Publication Date: 2019-04-05
STATE GRID CHONGQING ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electric field sensor includes two important structures: shielding and sensing electrodes. There are silicon-glass substrate composite structures, silicon film shielding electrodes, and metal film shielding electrodes. It is very complex and the yield is relatively low, so a polysilicon thin film electrode is required

Method used

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  • Preparation process of a polysilicon film electrode
  • Preparation process of a polysilicon film electrode
  • Preparation process of a polysilicon film electrode

Examples

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Effect test

Embodiment 1

[0029] Embodiment 1, this embodiment provides a polysilicon thin film electrode preparation process, including the following steps:

[0030] S1, first preparing a layer of silicon nitride insulating layer on the substrate;

[0031] S2. Depositing a layer of polysilicon thin film by chemical vapor deposition technology on the silicon nitride insulating layer at high temperature to make the sensing electrode;

[0032] S3, preparing a silicon oxide sacrificial layer on the polysilicon film;

[0033] S4. Depositing a layer of polysilicon film on the silicon oxide sacrificial layer at high temperature by chemical vapor deposition technology to make a shielding electrode;

[0034] S5. Using the porosity of the silicon oxide to remove the silicon oxide, and separate the induction motor and the shielding electrode.

[0035] The material of the substrate is quartz.

[0036] Silicon oxide or silicon nitride particle films are prepared by chemical vapor deposition.

[0037] The thick...

Embodiment 2

[0044] Embodiment 2, this embodiment provides a polysilicon thin film electrode preparation process, including the following steps:

[0045] S1, first preparing a layer of silicon nitride insulating layer on the substrate;

[0046] S2. Depositing a layer of polysilicon thin film by chemical vapor deposition technology on the silicon nitride insulating layer at high temperature to make the sensing electrode;

[0047] S3, preparing a silicon oxide sacrificial layer on the polysilicon film;

[0048] S4. Depositing a layer of polysilicon film on the silicon oxide sacrificial layer at high temperature by chemical vapor deposition technology to make a shielding electrode;

[0049] S5. Using the porosity of the silicon oxide to remove the silicon oxide, and separate the induction motor and the shielding electrode.

[0050] The material of the substrate is quartz.

[0051] Silicon oxide or silicon nitride particle films are prepared by chemical vapor deposition.

[0052] The thick...

Embodiment 3

[0059] Embodiment 3, this embodiment provides a polysilicon thin film electrode preparation process, including the following steps:

[0060] S1, first preparing a layer of silicon nitride insulating layer on the substrate;

[0061] S2. Depositing a layer of polysilicon thin film by chemical vapor deposition technology on the silicon nitride insulating layer at high temperature to make the sensing electrode;

[0062] S3, preparing a silicon oxide sacrificial layer on the polysilicon film;

[0063] S4. Depositing a layer of polysilicon film on the silicon oxide sacrificial layer at high temperature by chemical vapor deposition technology to make a shielding electrode;

[0064] S5. Using the porosity of the silicon oxide to remove the silicon oxide, and separate the induction motor and the shielding electrode.

[0065] The material of the substrate is quartz.

[0066] Silicon oxide or silicon nitride particle films are prepared by chemical vapor deposition.

[0067] The thickne...

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Abstract

The invention provides a preparation process of a polysilicon film electrode. The preparation process comprises the following steps that firstly, a silicon nitride insulating layer is prepared on a substrate; a layer of polysilicon film for making an induction electrode is deposited on the silicon nitride insulating layer at high temperature by using a chemical vapor deposition technique; a silicon oxide sacrificial layer is prepared over the polysilicon film; a layer of polysilicon film for making a shielding electrode is deposited over the silicon oxide sacrificial layer at high temperatureby using a chemical vapor deposition technique; and silicon oxide is removed by using the looseness of the silicon oxide, the induction electrode is separated from the shielding electrode. According to the preparation process of the polysilicon film electrode, the excellent conductivity of polysilicon materials is used, the polysilicon film electrode can directly served as a working electrode, a working electrode plane can be obtained through the growth of a layer of polysilicon, the process technology of etching, depositing metal and the like is relatively simple, and the yield is relativelyhigh.

Description

technical field [0001] The invention relates to the technical field of polysilicon thin film electrodes, in particular to a preparation process of polysilicon thin film electrodes. Background technique [0002] Electric field measurement is of great significance. In the field of meteorology, monitoring the surface and high-altitude atmospheric electric field changes can provide information on the breeding, development and occurrence of lightning, and provide important indicators for lightning early warning, thereby providing important safety guarantees for the launch of missiles and satellites and other aircraft. Forests, scenic spots, transmission lines, and petrochemical refineries provide early warning information; in the field of power grids, monitoring the electric fields near transmission lines and substations can accurately obtain AC and DC voltage and phase information, providing important reference for smart grid transmission status, and also knowing The electric f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/40C30B28/14C30B29/06G01R29/12
CPCC23C16/345C23C16/402C30B28/14C30B29/06G01R29/12
Inventor 罗勇罗嘉玮李斌
Owner STATE GRID CHONGQING ELECTRIC POWER