Adjustable induction coil device

Abstract

The invention discloses an adjustable induction coil device. The adjustable induction coil device comprises N turns of induction coils, a ceramic disc, a bolt, a nut and coil electrodes, wherein N isa positive integer, the ceramic disc is arranged in parallel to a plane wherein the induction coils are arranged, the bolt and the nut are used for connecting and fixing the N turns of induction coilsand the ceramic disc, the height of each turn of induction coil along a direction perpendicular to a coil plane is adjustable by matching of the bolt and the nut so that the distance between each turn of induction coil and the ceramic disc is changed, and the coil electrodes are respectively led out of an initial end and a tail end of the N turns of induction coils and are used for connecting anAC power supply so as to supply power to the induction coils. The temperature of each region of a tray is changed by adjusting the distance between each turn of coil and the tray so that the temperature is uniform or consistent and the integral excellent temperature uniformity of the tray is achieved, and simple adjustment, convenient practicality and flexible adjustment of the temperature uniformity of thin film material growth equipment employing an induction heating mode are achieved.

Description

technical field [0001] The invention belongs to the field of thin film material growth equipment manufacturing and relates to an adjustable induction coil device. Background technique [0002] Metal-organic chemical vapor deposition (MOCVD) equipment is one of the key equipment for the epitaxial growth of compound semiconductor materials. It has a wide range of applications and can grow almost all compound and alloy semiconductors. It is very suitable for growing various heterostructure materials and can grow super Thin epitaxial layer, and can obtain a very steep interface transition, especially suitable for large-scale production in the semiconductor industry, is the most important equipment for epitaxial growth of compound semiconductors such as gallium nitride, indium phosphide, gallium arsenide, and zinc oxide in recent years. [0003] During the growth process of thin film materials, various chemical reactions occur on the substrate under high temperature conditions to...

AI Technical Summary

Problems solved by technology

However, a major problem with induction heating is that it is difficult to control the temperature uniformity.

For induction heating, the induction coil in induction heating equipment is generally a whole, which is different from the heating wire or heating sheet of radiation heating, which is divided into multiple independent parts and controlled separately. Once the induction coi

Images