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A preparation method of selective emitter and a preparation method of selective emitter battery

An emitter and selective technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as increased process complexity, increased equipment investment costs, and reduced production efficiency, achieving high photoelectric conversion efficiency and mass production threshold The effect of low cost and high production efficiency

Active Publication Date: 2020-07-10
HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to an additional laser selective doping process in the preparation process, the complexity of the process increases and the production efficiency decreases
In addition, when using the process to prepare the selective emitter, in order to match the subsequent printing process, a high-precision laser is required, which has problems such as high preparation cost and low preparation efficiency.
In addition, no matter what kind of existing selective emitter technology, new equipment must be introduced into the conventional production line, and the cost of the newly invested equipment is relatively high, or the existing equipment must be modified to a large extent. Upgrading to a selective emitter battery production line will increase the cost of equipment investment; at the same time, the introduction of new process technology requires investment in equipment and process debugging, which is also a challenge for conventional production lines

Method used

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  • A preparation method of selective emitter and a preparation method of selective emitter battery
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  • A preparation method of selective emitter and a preparation method of selective emitter battery

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Embodiment 1

[0042] A preparation method for a selective emitter, the preparation process is as follows figure 1 shown, including the following steps:

[0043] S1. Cover the quartz mask on the textured silicon wafer, so that the quartz mask of the quartz mask coincides with the silicon wafer illumination area, wherein the distance between the quartz mask and the silicon wafer is 1mm, that is, the quartz mask The mask foot height (d) of the film is 1 mm; the distance between two adjacent quartz masks is 20 μm, that is, the mask distance (w) of the quartz mask is 20 μm. In this step, the top view and side view of the quartz mask are as follows figure 2 with 3 shown.

[0044] S2. Send the quartz mask plate and the silicon wafer into the diffusion furnace for high-doped deep diffusion, and form a highly-doped deep diffusion area in the electrode area of ​​the silicon wafer. The parameters of the high-doped deep diffusion are: temperature 780°C , the diffusion small nitrogen flow rate is 8...

Embodiment 2

[0050] A preparation method for a selective emitter battery, the preparation process is as follows Figure 4 shown, including the following steps:

[0051] (1) Texturing silicon wafers: Texturing P-type monocrystalline silicon wafers in a tank machine, the texturing solution used is potassium hydroxide aqueous solution with a mass concentration of 8%, and the texturing temperature is 80 ℃, and the time of texturing treatment is 300 s. After the texturing is completed, the silicon wafer is cleaned with deionized water and dried.

[0052] (2) Preparation of selective emitter on the textured silicon wafer:

[0053] (2.1) Cover the quartz mask on the textured silicon wafer, so that the quartz mask of the quartz mask coincides with the silicon wafer illumination area, and the distance between the quartz mask and the silicon wafer is 1mm, that is, the quartz The foot height (d) of the mask is 1 mm; the distance between two adjacent quartz masks is 20 μm, that is, the mask distanc...

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Abstract

The invention discloses a preparation method of a selective emitter and a preparation method of a selective emitter battery. The preparation method of the selective emitter comprises the following steps of: covering a mask plate on a textured silicon chip; sending the silicon chip into a diffusion furnace for high-doping deep diffusion and low-doping shallow diffusion; respectively forming a high-doping deep diffusion area and a low-doping shallow diffusion area; and carrying out annealing and removing the mask plate to complete the preparation. The preparation method of the selective emitterbattery comprises the preparation steps of the selective emitter. According to the preparation method of the selective emitter, processes and equipment are not additionally added, large-scale transformation and debugging are not carried out on the existing equipment and processes, and the existing production line equipment can be compatible to realize selective doping, so that the preparation method has the advantages of being simple in process, low in mass production threshold, low in preparation cost, good in compatibility and high in production efficiency, and has important significance forthe selective emitter battery with low preparation cost and high photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the field of preparation of selective emitter batteries, and relates to a preparation method of a selective emitter and a preparation method of a selective emitter battery. Background technique [0002] At present, the key to improving the efficiency of solar cells is to develop high-efficiency cell technologies, such as selective emitter (SE) cells. For selective emitter cells, by: 1) forming a highly doped deep diffusion region under and near the electrode grid line; 2) forming a low doped shallow diffusion region in the illuminated area to form selective doping for the emitter region , to achieve the effect of different doping concentrations in the grid line contact area and the light area, which reduces the metallization contact resistance, reduces surface recombination, and improves battery conversion efficiency. The preparation method of the existing selective emitter battery comprises the following steps: texturing-diff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804H01L31/186H01L31/1864Y02E10/547Y02P70/50
Inventor 黄海龙赵增超周子游刘文峰
Owner HUNAN RED SUN PHOTOELECTRICITY SCI & TECH