Tunable two-band THz absorber based on a Fermi-Dirac material

An absorber and frequency band technology, applied in the field of adjustable two-band THz absorber, can solve the problems of high cost, increase the difficulty and cost of manufacture, limit the scope of application of the absorber, and achieve the effect of high absorption rate

Active Publication Date: 2019-04-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, in the design of terahertz wave absorbing devices, the tunable function is mainly realized by changing the structural geometric parameters, which not only limits the scope of application of the absorber, but also has a high cost
In addition, the currently designed terahertz absorbers are basically three-layer or even more than three-layer structures, which increases the difficulty and cost of production

Method used

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  • Tunable two-band THz absorber based on a Fermi-Dirac material
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  • Tunable two-band THz absorber based on a Fermi-Dirac material

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Embodiment 1

[0027] An adjustable two-band THz absorber based on Fermi Dirac material, comprising a lattice unit composed of an absorbing layer 1 and a reflective layer 2 stacked up and down tightly, the absorbing layer 1 is a photonic crystal, and the reflective layer 2 is a Dirac material.

[0028] The absorbing layer 1 is a circular cylinder structure, wherein the hollow channel at the center of the circular cylinder structure is connected to the top surface of the reflective layer 2, and the reflective layer 2 is a rectangular structure, wherein the inner circle of the absorbing layer 1 The projections of all fall into the top surface of the reflective layer, and the projections of the outer circle of the absorbing layer 1 all fall into the top surface of the reflective layer.

[0029] The height of the circular cylinder structure is 30 μm-40 μm, the outer radius of the circular cylinder structure is R1=35 μm-40 μm, and the inner circle radius of the circular cylinder structure is R2=1...

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Abstract

The invention discloses a tunable two-band THz absorber based on a Fermi-Dirac material. The tunable two-band THz absorber comprises a lattice unit composed of an absorbing layer 1 and a reflective layer 2 which are closely stacked in the vertical direction. The absorbing layer 1 is a photonic crystal. The reflective layer 2 is a Dirac material. The metamaterial absorber of the present invention is different from a traditional three-layer structure having metal-dielectric-metal configuration. A traditional absorber based on precious metals such as gold, silver, copper and the like can only bedesigned on a fixed absorption peak. If the absorption peak is required to be adjusted to other frequency regions, the geometric parameters of the absorber must be carefully re-optimized. The tunabletwo-band THz absorber not only uses the Dirac material to realize the tunable frequency, but also just uses the photonic crystal so as to be simple in structure, especially free of patterns with metalstructure. Thus, the tunable two-band THz absorber is low in cost and easy to machine.

Description

technical field [0001] The invention relates to the field of metamaterial absorbers, in particular to an adjustable two-band THz absorber based on Fermi Dirac materials. Background technique [0002] Terahertz (THz) waves are electromagnetic waves with a frequency between 0.1THz and 10THz. Terahertz waves have the characteristics of low photon energy, high temporal and spatial coherence, and strong penetration. They are used in nondestructive testing, medical imaging, electronic countermeasures, and radar , remote sensing, outer space broadband communication and other fields have broad application prospects. However, it is difficult for conventional materials to generate electromagnetic responses in the terahertz band. [0003] Electromagnetic metamaterials are a new type of artificially synthesized materials with extraordinary electromagnetic properties. Purpose. Realize new electromagnetic properties such as negative refractive index, perfect transmission and perfect ab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q17/00G02B5/00G02B1/00
CPCG02B1/002G02B5/003H01Q17/007
Inventor 阙隆成孟威威闵道刚罗昕杰吕坚蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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