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Write-once read-many memory based on a phenyltetramine-based coordination polymer film and preparation method thereof

A coordination polymer, multiple reading technology, applied in the field of memory, can solve problems such as reducing device preparation efficiency, and achieve the effects of improving device preparation efficiency and facilitating transfer

Active Publication Date: 2019-04-19
NANJING UNIV OF TECH
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  • Application Information

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Problems solved by technology

However, the active material powder spin-coating film formation step involved in the device preparation process greatly reduces the device preparation efficiency

Method used

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  • Write-once read-many memory based on a phenyltetramine-based coordination polymer film and preparation method thereof
  • Write-once read-many memory based on a phenyltetramine-based coordination polymer film and preparation method thereof
  • Write-once read-many memory based on a phenyltetramine-based coordination polymer film and preparation method thereof

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Embodiment

[0039] The reagents and instruments used in this example are shown in Table 1 and Table 2 below.

[0040] Table 1 Reagents used in this embodiment

[0041]

[0042] Table 2 equipment and instruments used in this embodiment

[0043]

[0044] Such as figure 2 As shown, in this embodiment, the steps of preparing the write-once-read-many memory based on the coordination polymer film of phenyltetramine are:

[0045] (1) First, use the ITO glass as the substrate to be ultrasonically cleaned with deionized water, acetone, and ethanol for 20 minutes, and then blown clean with nitrogen;

[0046] (2) Prepare the coordination polymer cobalt-benzenetetramine as a coordination polymer film with a thickness of 60nm, and transfer it to the substrate, and dry it in the natural environment;

[0047]Wherein, the preparation method of the coordination polymer film is as follows: the coordination polymer film is obtained on the surface of the solution, that is, the surface of air and wa...

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Abstract

The invention discloses a write-once read-many memory based on a phenyltetramine-based coordination polymer film and a preparation method thereof. The memory comprises a substrate, a phenyltetramine-based coordination polymer film and a top electrode which are arranged in order from bottom to top, wherein the thickness of the phenyltetramine-based coordination polymer film is 60nm. The thickness of the phenyltetramine-based coordination polymer film is controlled to 60nm to achieve preparation of the nonvalatile write-once read-many memory device. Based on the independency of the coordinationpolymer film on the substrate, a flexible conductive material is taken as a bottom electrode to achieve preparation of the flexible memory based on the coordination polymer film electrode to fit the development demand of the flexible electronic device. The preparation method of the coordination polymer film can perform direct film forming to facilitate transfer so as to improve the preparation efficiency of the device.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to an organic memory device and a preparation method thereof. Background technique [0002] The rapid development of information promotes the development of information storage technology, and the development of storage technology is accompanied by the development of advanced materials. Thanks to the advantages of fast read and write speed, low power loss, simple structure, and good stability, RRAM occupies a favorable position in the future storage field. A typical RRAM cell structure is a metal-active material-metal-like "sandwich structure". Memories with different storage properties can be prepared by selecting appropriate active materials, such as flash memory (Flash Memory), "write once read many" memory (WORM Memory), and dynamic random access memory (DRAM Memory). In recent years, organic materials (dyes, complexes, oligomers, and polymers) have been considered ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/881H10N70/011
Inventor 修飞花蔚蔚
Owner NANJING UNIV OF TECH
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