Multi-line cutting method, multi-line cutting device and application thereof, semiconductor material and power device

Abstract

The invention provides a multi-line cutting method, a multi-line cutting device and application thereof, a semiconductor material and a power device, and relates to the technical field of multi-line cutting. The multi-line cutting method comprises the following steps that a line spool for winding cutting lines vibrates under the excitation action of ultrasonic waves, and the cutting lines vibrateand cut a to-be-cut object under the conveying action of the line spool. The cutting line vibrate under the excitation action of the ultrasonic waves, energy of the cutting lines can be increased, thecutting capability of the cutting lines can be enhanced, abrasion of the cutting lines can be reduced, abrasive materials can be forced to impact and grind the to-be-cut object at the high frequencyand speed, the chip removal speed is high, therefore, the surface curvature, the surface warpage and the total thickness deviation of a product obtained after cutting are all small, and the cutting quality is high.

Description

Technical field [0001] The present invention relates to the technical field of multi-wire cutting, in particular to a multi-wire cutting method, a multi-wire cutting device and its use, semiconductor materials and power devices. Background technique [0002] The third-generation wide-bandgap semiconductor materials (such as single crystal silicon carbide) have excellent performance. In recent years, they have rapidly penetrated into the fields of lighting, power devices, microwave and radio frequency, etc., and have the ability to manufacture high-frequency and high-power devices that are resistant to high temperature and radiation. The broad application prospects have become the focus of international attention. At present, in the manufacturing and epitaxial growth of next-generation power devices, there are strict requirements on the final surface quality of the substrate material. However, due to the high hardness of the above-mentioned semiconductor materials (for example, th...

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Problems solved by technology

At present, in the manufacture and epitaxial growth of next-generation power devices, there are strict requirements on the final surface quality of substrate materials. However, due to the high hardness of the above-mentioned semiconductor materials (such as the Mohs hardness of SiC crystal is 9.2, second diamond), the chemical stability is very good (almost no obvious chemical reaction with other substances at room temperature), so the semiconductor substrate is difficult to process

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