Workpiece processing methods and process chambers

Abstract

The invention discloses a workpiece processing method and a process chamber. The method includes: providing a blank of the workpiece; performing rough processing on the blank to obtain a preliminary semi-finished product; finishing processing the surface of the preliminary semi-finished product to obtain an intermediate semi-finished product, wherein the surface roughness value of the intermediate semi-finished product is Ra 1 <1.6: Predetermined treatment is performed on the surface of the intermediate semi-finished product to obtain the workpiece, wherein the surface roughness value of the workpiece conforms to a preset roughness value. In the process chamber structure of the workpiece formed by applying the processing method of the workpiece, it can effectively reduce the particle impurities generated on the surface of the wafer, improve the processing yield of the wafer, reduce the production cost, and improve the economic benefit.

Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a processing method for a workpiece and a process chamber including the workpiece manufactured by the processing method. Background technique

[0002] When the traditional etching machine is etching the wafer, once the process by-products land on the surface of the wafer, it will form particulate impurities, resulting in poor etching process. Therefore, in order to ensure the etching yield of the wafer, the particle impurities in the process need to be strictly controlled.

[0003] Such as figure 1 with figure 2 Shown is a schematic diagram of the structure of the etching machine. Wherein, the etching machine 100 includes a reaction chamber 112, a dielectric window 114 located at the top of the reaction chamber, a radio frequency coil 116, a nozzle 118, an adjustment bracket 120 located between the reaction chamber 112 and the dielectric window 114, and is...

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