Semiconductor structure and method of forming the same

Abstract

The present invention provides a semiconductor structure and a method of forming the same. The method comprises the steps of: providing a substrate having temporary fins and dummy fins protruding fromthe substrate; forming a first isolation layer on the substrate, wherein the first isolation layer covers the side walls of the temporary fins and the side walls of the dummy fins; removing the dummyfins, forming a first groove in the first isolation layer; forming a second isolation layer filling the first groove; removing the temporary fins, and forming a second groove in the first isolation layer; forming a replacement fin filling the second groove, where the materials of the replacement fin are different from the materials of the temporary fins; removing the first isolation layer and thesecond isolation with part of thickness, wherein the top of the residual first isolation layer and the top of the residual second isolation layer are lower than the top of the replacement fin. The formation method can obtain the replacement fin with good width uniformity so as to improve the electrical performances of the semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In semiconductor manufacturing, as the feature size of integrated circuits continues to decrease, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, resulting in poor control ability of the gate to the channel, and short-channel effects (SCE: short-channel effects) more likely to happen. [0003] The Fin Field Effect Transistor (FinFET) has outstanding performance in suppressing the short channel effect. The gate of the FinFET can control the fin at least from both sides. Therefore, compared with the planar MOSFET, the gate of the FinFET has an The control ability is stronger, and the short channel effect can be well suppr...

AI Technical Summary

Problems solved by technology

[0005] However, even with the introduction of novel channel materials in the FinFET fabrication process, the electrical performance of state-of-the-art semiconductor structures is still poor

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