Preparation method of epitaxial wafer of light-emitting diode

Abstract

The invention discloses a preparation method of an epitaxial wafer of a light-emitting diode, and belongs to the field of light-emitting diode manufacturing. The preparation method comprises the following steps: trimethyl gallium is introduced into a reaction cavity, wherein the trimethyl gallium acts on an AlN layer, gallium atoms in the trimethyl gallium are attracted by micro-pits with lower potential energy on the surface of the AlN layer far away from the substrate, and the gallium atoms are filled into the micro-pits on the AlN layer, so that the surface of the AlN layer is relatively flat; the trimethyl gallium is intermittently introduced, so that the protrusion at the micro-pits due to excessive gallium atom filling can be avoided, the roughness of the surface of the AlN layer faraway from the substrate is reduced, the surface flatness of a three-dimensional GaN nucleation layer grown on the AlN layer is ensured, and the surface flatness of the whole epitaxial wafer is further ensured, which is beneficial to improving the light-emitting uniformity of the light-emitting diode. The gallium atoms fill the micro-pits on the AlN layer, so that the defect of the AlN layer at the micro-pits can be prevented from being transferred to the three-dimensional GaN nucleation layer, the quality of the three-dimensional GaN nucleation layer is improved, the crystal quality of the epitaxial wafer is ensured, and the luminous efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode manufacturing, in particular to a method for preparing an epitaxial wafer of a light-emitting diode. Background technique [0002] Light-emitting diodes are semiconductor diodes that can convert electrical energy into light energy. They have the advantages of small size, long life, and low power consumption. They are currently widely used in automotive signal lights, traffic lights, display screens, and lighting equipment. The epitaxial wafer is the basic structure for making light-emitting diodes. The structure of the epitaxial wafer includes a substrate and an epitaxial layer grown on the substrate. Among them, the structure of the epitaxial layer mainly includes: an AlN layer grown on the substrate in sequence, a three-dimensional GaN nucleation layer, an undoped GaN layer, an N-type GaN layer, an active layer and a P-type GaN layer. [0003] The AlN layer arranged between the N-type GaN la...

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Problems solved by technology

However, the surface quality of the AlN layer in the existing epitaxial wafers is still relatively rough, which will affect the surface flatness of the three-dimensional GaN nucleation layer and other structures grown behind the AlN layer, thereby affecting the light emission of the light-emitting diode.

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