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Passivation method of polysilicon film layer in solar cell

A technology of solar cells and polysilicon, applied in the field of solar cells, can solve the problems of reducing the short-circuit current of solar cells and the large light absorption coefficient of polysilicon

Inactive Publication Date: 2019-05-03
ZHEJIANG JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the polysilicon used in passivation contact technology has a large light absorption coefficient, which will correspondingly reduce the total amount of photons entering the body region of the solar cell, thereby reducing the short-circuit current of the solar cell
Therefore, the current passivation contact technology cannot be applied to the front of the solar cell, and is generally used on the back of the solar cell to minimize the impact on light absorption

Method used

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  • Passivation method of polysilicon film layer in solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Take the silicon substrate compounded with oxide layer and polysilicon, deposit a layer of silicon oxide mask layer on the surface of polysilicon, with a thickness of 60nm, and then print an organic wax layer on the mask layer by screen printing. The organic wax layer has finger lines. The pattern of the formula means that the line width of the grid line is 100 μm.

[0048] Put the above-mentioned polysilicon in a 5% HF solution with a mass concentration, etch at 8°C for 2 minutes, etch the mask of the area without organic wax protection, and then use an alkali solution with a mass concentration of 10% to wash off the organic wax layer. The alkali solution is NaOH and BDG mixed solution;

[0049] Immerse the above-mentioned polysilicon that has been cleaned of the organic wax layer into 1% texturizing lye (KOH and texturing additives), etch at 60° C. for 5 minutes, etch the polysilicon without mask protection, and finally use a mass concentration of 1 The %HF solution ...

Embodiment 2

[0053] Take the silicon substrate compounded with oxide layer and polysilicon, deposit a layer of silicon oxide mask layer on the surface of polysilicon, with a thickness of 160nm, and then print an organic wax layer on the mask layer by screen printing. The organic wax layer has finger lines. The pattern of the formula means that the line width of the grid line is 300 μm.

[0054] Put the above-mentioned polysilicon in 50% HF solution with mass concentration, etch at 25°C for 8 minutes, etch the mask without organic wax protection area, and then use an alkali solution with a mass concentration of 1% to wash off the organic wax layer, and the alkali solution is KOH and BDG mixed solution;

[0055] Immerse the above-mentioned polysilicon that has been cleaned of the organic wax layer into an alkali solution (KOH and texturing additive) with a mass concentration of 15%, etch at 70° C. for 2 minutes, etch the polysilicon without mask protection, and finally use a mass concentrati...

Embodiment 3

[0059] Take a silicon substrate compounded with an oxide layer and polysilicon, deposit a silicon oxide mask layer on the surface of the polysilicon, with a thickness of 100nm, and then print an organic wax layer on the mask layer by screen printing. The organic wax layer has finger lines The pattern of the formula means that the line width of the grid line is 200 μm.

[0060] Put the above-mentioned polysilicon in 30% HF solution with mass concentration, etch at 15°C for 5 minutes, etch the mask without organic wax protection area, and then wash off the organic wax layer with an alkali solution with a mass concentration of 5%, and the alkali solution is KOH and BDG mixed solution;

[0061] The above-mentioned polysilicon that has been cleaned of the organic wax layer is immersed in a 5% texturizing lye (KOH and texturing additive), etched at 80° C. for 8 min, and etched without mask protection. Finally, use a mass concentration of 5% The %HF solution washes off the mask of t...

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Abstract

The invention provides a passivation method of a polysilicon film layer in a solar cell. The method includes the following steps: A) depositing a layer of mask on the surface of the polysilicon film layer, and then compounding a layer of organic wax with a finger grid line pattern on the surface of the mask to obtain a pretreated polysilicon film layer; B) immersing the pretreated polycrystallinefilm layer in a first HF solution, etching the mask without an organic wax protection region, and then cleaning to remove the organic wax by using an alkali solution; C) immersing the polysilicon filmlayer with removal of the organic wax in a texturing alkali solution, etching the polysilicon film layer without a mask protection region, and then cleaning to remove the mask by using a second HF solution to obtain the polysilicon film layer having the finger grid line pattern; and D) sequentially performing passivation and screen printing on the polysilicon film layer having the finger grid line pattern. The passivation method achieves a selective polysilicon passivation technology by utilizing the mask and the organic wax, achieves polysilicon retention in a metal region but other places are etched away, and achieves an extremely low light absorption coefficient.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a passivation method for polysilicon film layers in solar cells. Background technique [0002] The open circuit voltage of the solar cell is directly affected by the internal recombination of the solar cell, and the recombination of the metal contact area has accounted for a large proportion of the solar cell development, which is the main factor limiting the further improvement of the solar cell open circuit. [0003] At present, passivation contact technology is very hot. The so-called passivation contact technology refers to the fact that the metal electrode used to collect current is not directly in contact with the silicon substrate, and there is an extra thin oxide layer and a doped layer between them. Polysilicon film layer. The advantage of this design is to ensure that the metal recombination current density between the metal electrode and the silicon substrate is a...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216
CPCY02P70/50
Inventor 徐冠群包健张昕宇金浩
Owner ZHEJIANG JINKO SOLAR CO LTD
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