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Transfer probe, two-dimensional heterojunction and preparation method thereof, and preparation system of two-dimensional heterojunction

A technology of two-dimensional heterojunction and preparation system, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. Knots, wrinkles, etc.

Active Publication Date: 2020-11-10
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current two-dimensional materials are easy to bend, and it is easy to cause wrinkles in the two-dimensional heterojunction during the transfer process, which seriously affects the quality of the two-dimensional heterojunction device.

Method used

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  • Transfer probe, two-dimensional heterojunction and preparation method thereof, and preparation system of two-dimensional heterojunction
  • Transfer probe, two-dimensional heterojunction and preparation method thereof, and preparation system of two-dimensional heterojunction
  • Transfer probe, two-dimensional heterojunction and preparation method thereof, and preparation system of two-dimensional heterojunction

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preparation example Construction

[0067] The glove box 700 is used to ensure the preparation environment of the two-dimensional heterojunction. Among them, the protective gas can be passed into the glove box 700, so as to avoid the oxidation or pollution of the two-dimensional heterojunction by the water vapor and oxygen in the air during the preparation of the two-dimensional heterojunction, and ensure the two-dimensional heterojunction knot quality. Further, the protective gas is nitrogen. Wherein, the vibration-absorbing platform 100 , the stage 200 , the heating platform 300 , the transfer platform 400 , the transfer probe 500 and the microscopic imaging system 600 are all housed in the glove box 700 .

[0068] It should be noted that the damping platform 100 is used to improve the stability of the two-dimensional heterojunction preparation system 10 , and if the two-dimensional heterojunction system 10 is relatively stable during operation, the damping platform 100 can be omitted.

[0069] It should be ...

Embodiment 1

[0122] The preparation process of the two-dimensional heterojunction in this embodiment is specifically as follows:

[0123] (1) Preparation of transfer probes

[0124] The basic components of Dow Corning SYLGARD 184 silicone rubber and curing agent were mixed at a weight ratio of 10:1, coated on a glass slide, and cured at 100°C to obtain an elastic buffer layer with a thickness of 3mm. Cover the elastic buffer layer with scotch tape and stick it to the glass substrate. The anisole solution of methyl methacrylate with a mass percentage of 15% was spin-coated on the elastic buffer layer at a speed of 3000r / min for 30s, and then dried at 90°C for 10min to obtain an extraction layer with a thickness of 0.5mm. Use tape to stick boron nitride, attach the tape to the first silicon substrate, press the tape to make the first silicon substrate adsorb boron nitride, and then remove the tape to obtain the first silicon substrate with boron nitride adsorbed . Use a microscope to find...

Embodiment 2

[0133] The preparation process of the two-dimensional heterojunction in this embodiment is specifically as follows:

[0134] (1) Preparation of transfer probes

[0135] The basic components of Dow Corning SYLGARD 184 silicone rubber and curing agent were mixed at a weight ratio of 10:1, coated on a cover glass, and cured at 25°C to obtain an elastic buffer layer with a thickness of 0.5mm. Cover the elastic buffer layer with scotch tape and stick it to the glass substrate. The anisole solution of polypropylene carbonate with a mass percentage of 10% was spin-coated on the elastic buffer layer at a speed of 3000r / min for 40s, and then dried at 80°C for 5min to obtain an extraction layer with a thickness of 0.3mm. Use tape to stick boron nitride, attach the tape to the first silicon substrate, press the tape to make the first silicon substrate adsorb boron nitride, and then remove the tape to obtain the first silicon substrate with boron nitride adsorbed . Use a microscope to ...

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Abstract

The invention relates to a transfer probe and its preparation method, a two-dimensional heterojunction and its preparation method and preparation system. The transfer probe includes a glass substrate and a transparent elastic buffer layer, an extraction layer and a transfer layer laminated on the glass substrate in sequence. The extraction layer is selected from a polypropylene carbonate layer and a polymethyl methacrylate layer. The transfer layer is a boron nitride layer, and the flatness of the transfer layer is angstrom level. The above-mentioned transfer probe can effectively ensure the flatness of the two-dimensional heterojunction, thereby improving the quality of the two-dimensional heterojunction device.

Description

technical field [0001] The invention relates to a transfer probe, a two-dimensional heterojunction, a preparation method thereof, and a preparation system for the two-dimensional heterojunction. Background technique [0002] With the rise of two-dimensional semiconductor materials, two-dimensional heterojunctions break through the limitations of traditional device materials and become an ideal material system for the preparation of electronic devices. However, the current two-dimensional materials are easy to bend, and it is easy to cause wrinkles in the two-dimensional heterojunction during the transfer process, which seriously affects the quality of the two-dimensional heterojunction device. Contents of the invention [0003] Based on this, it is necessary to provide a transfer probe capable of preparing a flatter two-dimensional heterojunction. [0004] In addition, a method for preparing a transfer probe, a two-dimensional heterojunction, a method for preparing the sa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H01L21/04
Inventor 戴俊峰赵悦
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA