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Template substrate, manufacturing method thereof, and light-emitting device

A technology for light-emitting devices and template linings, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of light extraction degradation and reduction, and achieve the effect of inhibiting absorption

Active Publication Date: 2021-06-22
TOYODA GOSEI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It was also found that the abnormal crystal growth region lowers the Al composition ratio of the region around the abnormal crystal growth region, and the region with the reduced Al composition ratio absorbs ultraviolet light from the light emitting device, resulting in deterioration of light extraction

Method used

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  • Template substrate, manufacturing method thereof, and light-emitting device
  • Template substrate, manufacturing method thereof, and light-emitting device
  • Template substrate, manufacturing method thereof, and light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0025] figure 1 The structure of the template substrate according to Embodiment Mode 1 is shown. The template substrate according to Embodiment 1 includes such as figure 1 A template substrate 10 , a three-dimensional growth layer 11 , a buried layer 12 , an undoped layer 13 and an n-type layer 14 are shown. The template substrate according to Embodiment 1 is used to form a light emitting device by depositing a semiconductor layer on the template substrate and is intended for an ultraviolet light emitting device (for example, a wavelength of 250 nm to 380 nm).

[0026] Substrate 10 is made of sapphire, and has the c-plane as a main surface. The main surface of substrate 10 has a non-uniform shape. The non-uniform shape improves light extraction efficiency and prevents cracks or hillocks on the semiconductor layers (three-dimensional growth layer 11, buried layer 12, undoped layer 13, and n-type layer 14) deposited thereon, thereby improving crystallization Spend.

[0027]...

Embodiment approach 2

[0070] Figure 8 The structure of the light emitting device according to Embodiment Mode 2 is shown. The light emitting device according to Embodiment Mode 2 is a flip chip type device, and is manufactured using the template substrate according to Embodiment Mode 1. In the light emitting device according to Embodiment 1, the light emitting device structure is deposited on the template substrate (n-type layer 14) according to Embodiment 1. More specifically, light emitting layer 20 , electron barrier layer 21 and p-type contact layer 22 are sequentially deposited on n-type layer 14 . A trench is formed from the p-type contact layer 22 to the n-type layer 14, and an n-electrode 23 is formed on the n-type layer 14 exposed at the bottom of the trench. A transparent electrode 24 is formed on the p-type contact layer 22 , and a p-electrode 25 is formed on the transparent electrode 24 .

[0071] Light emitting layer 20 is formed on n-type layer 14 . The light emitting layer 20 ha...

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Abstract

The present invention provides a template substrate, a manufacturing method thereof, and a light-emitting device to suppress the occurrence of an abnormal crystal growth region near the substrate. The template substrate includes a substrate, a three-dimensional growth layer, a buried layer, an undoped layer and an n-type layer. The surface of the substrate has a non-uniform shape. The non-uniform shape has a pattern in which protrusions are periodically arranged in an equilateral triangle grid. The curved surface of the protrusion has a shape such that the percentage of the area of ​​the curved surface region in which the inclination angle with respect to the main surface of the substrate is in the range of 30° to 50° to the entire surface area of ​​the protrusion is 30% or less. The protrusions have a contact angle of 60° to 90°.

Description

technical field [0001] The invention relates to a template substrate for manufacturing ultraviolet light-emitting devices and a manufacturing method thereof. The present invention also relates to a light emitting device using a template substrate. Background technique [0002] The Group III nitride semiconductor light emitting device has a non-uniform shape pattern in which protrusions are periodically arranged on the surface of a sapphire substrate to improve light extraction or crystallinity. [0003] Japanese Patent Application Laid-Open (Kokai) No. 2005-129896 discloses a light emitting device in which a Group III nitride semiconductor layer is deposited on a sapphire substrate having a non-uniform shape. The non-uniform shape has a pattern in which protrusions are regularly arranged and each protrusion has a curved surface. [0004] Japanese Patent Application Laid-Open (Kokai) No. 2010-161354 discloses a template substrate for a light emitting device. The template s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/22H01L33/00
Inventor 吉村和孝斋藤义树
Owner TOYODA GOSEI CO LTD