Light emitting diode chip with graphical structure and manufacturing method thereof

Abstract

The invention relates to a photoelectronic technology, and specifically relates to a light emitting diode with a graphical structure and a manufacturing method thereof. The graphical structure of thechip has a concave-convex effect, the groove bottom is exposed out of a substrate, a nucleation layer of a III-V group compound is deposited at the groove bottom, the III-V group compound epitaxiallygrows a III-V group buffer layer from the nucleation layer at the groove bottom, and the III-V group buffer layer epitaxially grows in the transverse direction along the side wall of the graphical structure while growing upwards, the III-V group buffer layer is enabled to cover the graphical structure and be healed to form a smooth and flat III-V group buffer layer film, then a I-type doped layer,a light emitting layer and a II-type doped layer epitaxially grown in sequence, and an electron beam evaporation transparent conductive layer, an electrode I and an electrode II are deposited. The light emitting diode chip reduces the dislocation density of the III-V buffer layer material through transverse epitaxial growth, so that the crystal quality is improved, thus the light emitting efficiency is improved, and the light extraction efficiency of a light emitting diode is increased.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and in particular relates to a light-emitting diode chip with a patterned structure and a manufacturing method thereof. Background technique [0002] Light-emitting diode is a light-emitting device with high luminous efficiency and long life. It has been widely used in lighting, flat panel display, disinfection and medical equipment and other fields. However, the crystal quality of the III-V group compound materials used to manufacture light-emitting diodes and the material's absorption of photons limit the further improvement of the luminous efficiency of light-emitting diode chips. Improving the crystal quality of III-V compounds and reducing the absorption of photons by materials has always been the research focus of light-emitting diodes. At present, commercial light-emitting diode chips basically grow III-V compound materials on sapphire pattern substrates, because the lattice const...

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Problems solved by technology

However, the epitaxial growth of III-V group compounds from sapphire patterned substrates will also produce a large dislocation density, because the III-V group compounds are epitaxially grown from the bottom and side walls of the sapphire patterned substrate grooves simultaneously, resulting in the There are still many dislocations after the epitaxial growth has healed

In addition, because the refractive index difference between the III-V compound material and the sapphire substrate is not large, the total reflection angle formed at the interface between the III-V compound and the sapphire pattern substrate is relatively large, and most of the light generated by the light-emitting layer is between the sapphire and the substrate. Reflection and refraction occur between III-V compounds at the same time, and the reflected light is continuously reflected and refracted inside the light-emitting diode, and finally absorbed by the material, resulting in a decrease in the external quantum efficiency of the light-emitting diode

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