Laser annealing method and array substrate

A technology of laser light source and substrate substrate, which is applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as large leakage current, and achieve the effect of reducing leakage current.

Active Publication Date: 2019-05-10
BOE TECH GRP CO LTD
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Problems solved by technology

[0005] Embodiments of the present invention provide a laser annealing method and an array substrate, which can solve the problem of large leakage current of TFTs composed of active layers in the related art

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  • Laser annealing method and array substrate
  • Laser annealing method and array substrate
  • Laser annealing method and array substrate

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Embodiment Construction

[0033] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0034] Low temperature polysilicon (English: Low Temperature Poly-silicon; LTPS for short) TFT is a TFT in which a polysilicon active layer is formed by applying laser annealing technology. The array substrate composed of LTPS TFTs can be applied in display panels such as organic light-emitting diode (English: Organic Light-Emitting Diode; abbreviation: OLED) display panels and liquid crystal display panels (English: Liquid Crystal Display; abbreviation: LCD).

[0035] At present, when the amorphous silicon layer is processed into a polysilicon layer by laser annealing technology, the entire amorphous silicon layer is usually scanned by laser to anneal the entire amorphous silicon layer, so that the entire amorphous silicon layer is tra...

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Abstract

The invention discloses a laser annealing method and an array substrate, belonging to the technical field of display. The method comprises steps of: providing a substrate; arranging a mask component at one side, far from the substrate, of at least one amorphous silicon pattern, wherein the mask component comprises a mask plate and a microlens array; irradiating the mask component from one side, far from the amorphous silicon pattern, of the mask component by a laser source, wherein laser emitted by the laser source penetrates the mask plate and the microlens array in the mask component and then irradiates a designated area of the at least one amorphous silicon pattern. In the method, the mask component consisting the mask plate and the microlens array controls laser emitted by the laser source to irradiate the designated area of an amorphous silicon layer. A laser annealing area is limited, so that area of the amorphous silicon layer converted into polysilicon layer is reduced. The method solves a problem of greater leakage current of TFT consisting of an active layer in related technology, and reduces leakage current of the TFT consisting of the active layer.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a laser annealing method and an array substrate. Background technique [0002] A thin film transistor (English: Thin Film Transistor; TFT for short) in a display panel usually includes a source, a drain, a gate and an active layer. Using polysilicon with high mobility as the material of the active layer can significantly improve the performance of the TFT. At present, the semiconductor layer made of polysilicon is usually formed by laser annealing technology. [0003] In a laser annealing method in the related art, the entire amorphous silicon layer is scanned by a laser to anneal the entire amorphous silicon layer to transform it into a polysilicon layer. [0004] In the process of realizing the present invention, the inventors found that the relevant technology has at least the following problem: the leakage current of the TFT formed of the active layer after laser annealing...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/324H01L27/12
Inventor 关峰王治许晨
Owner BOE TECH GRP CO LTD
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