Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memorizer and forming method thereof

A memory and substrate technology, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve the problems of high resistance of the common source contact, high filling stress of all tungsten, affecting the performance of the memory, etc., so as to avoid structural changes. , The effect of improving isolation performance and reducing power consumption

Active Publication Date: 2019-05-10
YANGTZE MEMORY TECH CO LTD
View PDF5 Cites 44 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are currently the following problems: the stress of full tungsten filling is too high, which will greatly affect the subsequent manufacturing process; although polysilicon and tungsten filling can reduce the stress, but due to the high resistance of polysilicon, it will make the common source contact (ACS ) resistance is too high, affecting memory performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memorizer and forming method thereof
  • Memorizer and forming method thereof
  • Memorizer and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The specific implementation of the memory provided by the present invention and its forming method will be described in detail below in conjunction with the accompanying drawings.

[0025] Please refer to figure 1 , providing a storage substrate, the storage substrate includes: a substrate 100 and a storage stack structure formed on the front surface of the substrate; a channel column structure 130 penetrating to the surface of the substrate is also formed in the storage stack structure, a penetrating The isolation wall 140 from the initial stack structure to the surface of the substrate; a common source doped region 141 is formed in the substrate 100 at the bottom of the isolation wall 140 .

[0026] The substrate 100 may be a semiconductor material, such as a single crystal silicon substrate, a single crystal germanium substrate, an SOI (silicon on insulator) substrate or a GOI (germanium on insulator) substrate, etc., and the substrate 100 may also be For n-type do...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a memorizer and a forming method thereof. The forming method of the memorizer comprises the following steps: providing a memory base, wherein the memory base comprises a substrate and a memory stack structure formed on the front of the substrate, a channel column structure and an isolation wall, which penetrate through the memory stack structure to a surface of the substrate, are formed in the memory stack structure, and a common source doped area is formed in the substrate at the bottom of the isolation wall; thinning the back of the substrate; forming a medium layerat the back of the thinned substrate; etching the medium layer and forming an opening, wherein the opening exposes the common source doped area in the substrate; filling the opening with a conductivelayer, and connecting to the common source doped area, wherein the conductive layer is used as a common source contact part. The method provided by the invention is beneficial for improving performance of the memorizer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory and a forming method thereof. Background technique [0002] In recent years, the development of flash memory (Flash Memory) is particularly rapid. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Has been widely used. In order to further increase the bit density (Bit Density) of the flash memory while reducing the bit cost (Bit Cost), three-dimensional flash memory (3D NAND) technology has been developed rapidly. [0003] 3D NAND memory, including a substrate and a memory stack structure formed on the surface of the substrate. The memory stack structure is formed with a channel column structure penetrating to the surface of the substrate to form a vertically arranged memory string. The bottom of the memory strin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/1157H01L27/11582
CPCH10B43/35H10B43/27
Inventor 刘毅华刘峻范鲁明
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com