Single-grid control voltage current sampling device based on LIGBT
A technology for controlling voltage and current sampling, which is applied to electrical components, semiconductor devices, circuits, etc., can solve the problems that current sampling and voltage sampling cannot be performed at the same time, and cannot fully meet high-voltage applications, so as to achieve controllable sampling ratio and sampling accuracy high effect
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[0029] Example 1
[0030] A single-gate control voltage and current sampling device based on LIGBT of the present invention, such as image 3 As shown, the cell structure includes a first conductivity type semiconductor substrate 1 and a substrate electrode 19 located on the lower surface of the first conductivity type semiconductor substrate 1; the upper surface of the first conductivity type semiconductor substrate 1 has an epitaxial oxide layer 2. The upper surface of the epitaxial oxide layer 2 has a second conductivity type semiconductor drift region 3; the second conductivity type semiconductor drift region 3 has a second conductivity type semiconductor doped region 4; the second conductivity type semiconductor doped The miscellaneous region 4 has a first conductivity type semiconductor anode region 5, the upper surface of the first conductivity type semiconductor anode region 5 has a first metal electrode 11; the second conductivity type semiconductor drift region 3 has a f...
Example Embodiment
[0038] Example 2
[0039] Such as Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the second conductivity type semiconductor doped region 7, the first conductivity type semiconductor doped region 8, and the second conductivity type semiconductor doped region 7 are sequentially arranged on the right side of the second conductivity type semiconductor cathode region 6 A conductive type semiconductor cathode region 9; a gap is provided between the right side of the second conductive type semiconductor cathode region 6 and the second conductive type semiconductor doped region 7, the second conductive type semiconductor doped region 7 and the first conductive type semiconductor The doped regions 8 are arranged next to each other.
Example Embodiment
[0040] Example 3
[0041] Such as Figure 5 As shown, the difference between this embodiment and Embodiment 1 lies in that: the first conductivity type semiconductor cathode region 9 and the second conductivity type semiconductor doped region 7 are arranged on the right side of the second conductivity type semiconductor cathode region 6 in sequence. Doped region 8; the second conductivity type semiconductor doped region 7 and the first conductivity type semiconductor doped region 8 are immediately arranged.
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