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Test method for improving appearance yield of GaN-based LED chip

A technology of LED chips and testing methods, applied in the field of optoelectronics, can solve problems such as increasing production costs, and achieve the effects of low cost, good testing accuracy and easy operation

Inactive Publication Date: 2019-05-14
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The conductive film required by this method requires a special conductive groove. Since the size of the GaN-based LED chip is 150-300 μm, and the conductive P\N electrode spacing in the chip is only 60-80 μm, it is undoubtedly necessary to make a conductive groove within such a small spacing. Increases the production cost, and at the same time, the alignment between the conductive film and the pad also requires auxiliary tools to achieve high-precision alignment

Method used

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  • Test method for improving appearance yield of GaN-based LED chip
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  • Test method for improving appearance yield of GaN-based LED chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1: Blue light chip GaN-based LED chip (COT state) test

[0035] (1) Blu-ray chip GaN-based LED chip, the P / N electrode spacing of the chip is 25 μm, and the chip is covered with an anisotropic conductive film. The light transmittance of the anisotropic conductive film is about 70%, and the thickness is 1mm. membrane, the spacing between chips is 200µm, as figure 1 shown;

[0036] (2) Place the product to be tested in step (1) on the test machine platform, and use the test machine platform to heat the anisotropic conductive film at a temperature of 100°C for 8 minutes, such as figure 2 shown;

[0037] (3) Scan the LED chip covered with the anisotropic conductive film on the automatic testing machine. After the test system completes the image recognition, stick the two probes of the testing machine to the anisotropic conductive film area corresponding to the positive and negative electrodes of the chip. Adjust the test needle pressure so that the strength ...

Embodiment 2

[0040] Embodiment 2: GaN-based LED chip (COW state) test,

[0041] (1) Blue light GaN-based LED chip, the P / N electrode spacing of the chip is 30 μm, and the chip is covered with an anisotropic conductive film. The light transmittance of the anisotropic conductive film is about 70%, and the thickness is 2mm. The chip is placed on the blue film On, the spacing between chips is 15-20μm;

[0042] (2) Place the product to be tested in step (1) on the test machine platform, and use the test machine platform to heat the anisotropic conductive film at a temperature of 110°C for 9 minutes;

[0043] (3) Scan the LED chip covered with the anisotropic conductive film on the automatic testing machine. After the test system completes the image recognition, stick the two probes of the testing machine to the anisotropic conductive film area corresponding to the positive and negative electrodes of the chip. Adjust the test needle pressure so that the strength of the needle pressure achieves ...

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Abstract

The invention provides a test method for improving the appearance yield of a GaN-based LED chip. The test method includes the steps that the Z direction of electrical conduction of an anisotropic conductive film is placed on a chip electrode in the mode perpendicular to the surface of the chip, non-contact electrical connection between a test probe and a chip electrode is realized under the condition that the anisotropic conductive film does not need to be aligned with the chip electrode, and an LED chip test is conducted. According to the test method for improving the appearance yield of theGaN-based LED chip, the anisotropic conductive film is introduced into the LED chip test, the difference of conductivity of the anisotropic conductive film in different dimensions is utilized, non-contact measurement between a test needle and the chip electrode is realized, and the requirements of nondestructive test and improving the appearance yield of the GaN-based LED chip are met.

Description

technical field [0001] The invention relates to a test method for improving the appearance yield of a GaN-based LED chip, which belongs to the field of optoelectronic technology. Background technique [0002] A light-emitting diode (LED) is a semiconductor diode that can convert electrical energy into light energy, and the LED chip is its core component. The preparation process of LED chips is complicated and there are many steps. In order to determine whether the LED can work normally and the various characteristics of the light-emitting diode, each LED after cutting is usually tested in order to classify according to its photoelectric parameters. GaN-based LEDs are LEDs that emit light based on GaN. GaN material has a directly adjustable wide bandgap from 1.9eV to 6.2eV, and can theoretically cover the entire visible light spectrum from red to ultraviolet. Since the 1990s, people have developed GaN-based blue LEDs. And the wavelength is extended to the green light and ul...

Claims

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Application Information

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IPC IPC(8): H01L21/66
Inventor 彭璐吴向龙赵军华徐晓强王彦丽肖成峰徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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