Windowing process of solar crystalline silicon battery
A technology of crystalline silicon battery and window opening technology, which is applied in the direction of circuits, electrical components, sustainable manufacturing/processing, etc. Unstable window effect and other problems, to achieve the effect of low thickness uniformity, good applicability, and stable window opening
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Embodiment 1
[0031] (1) Front-end process: Firstly, monocrystalline silicon wafers are placed in a NaOH solution with a mass concentration of 1.2% at 80°C for 15 minutes to form a pyramidal textured structure on the front and back sides, which are then cleaned with pure water and dried; Phosphorus is diffused on the front side of the chip to form an emitter (prior art), and the diffusion resistance is 70R 方 ; With a concentration of 7% HF solution, the phosphosilicate glass on the surface of the silicon wafer is cleaned and dried; then a layer of nitride is deposited on the front of the silicon wafer by PECVD (enhanced plasma vapor deposition method, prior art) Silicon anti-reflection coating with a thickness of 75nm and a refractive index of 2.0;
[0032] (2) Backside polishing: Put the silicon wafers processed in step (1) into the silicon wafer basket, put them into the polishing solution in the chemical polishing tank for chemical polishing for 5 minutes, the chemical polishing temperat...
Embodiment 2
[0038] (1) Front-end process: Firstly, monocrystalline silicon wafers are placed in a NaOH solution with a mass concentration of 1.2% at 80°C for 15 minutes to form a pyramidal textured structure on the front and back sides, which are then cleaned with pure water and dried; Phosphorus is diffused on the front side of the chip to form an emitter (prior art), and the diffusion resistance is 70R 方 ; With a concentration of 7% HF solution, the phosphosilicate glass on the surface of the silicon wafer is cleaned and dried; then a layer of nitride is deposited on the front of the silicon wafer by PECVD (enhanced plasma vapor deposition method, prior art) Silicon anti-reflection coating with a thickness of 75nm and a refractive index of 2.0;
[0039] (2) Backside polishing: Put the silicon wafers processed in step (1) into the silicon wafer basket, put them into the polishing solution in the chemical polishing tank for chemical polishing for 5 minutes, the chemical polishing temperat...
Embodiment 3
[0051] The difference between this embodiment and Example 1 lies in the formula of the etching slurry: the content of each component in the etching slurry is: concentrated phosphoric acid 15%, terpineol 8%, ethyl cellulose 12%, graphite powder 35% %, polyethylene glycol 30%. Others are with embodiment 1.
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