A Boosting Circuit for Improving the Power Supply Rejection Ratio of a Transimpedance Amplifier
A technology of transimpedance amplifier and power supply rejection ratio, which is applied in the field of analog signal processing, can solve problems such as circuit interference, array readout circuit crosstalk, poor power supply rejection ratio, etc., and achieve the effect of solving crosstalk and improving power supply rejection ratio
Active Publication Date: 2021-06-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology
[0003] Aiming at the above-mentioned problem that the power supply rejection ratio of the transimpedance amplifier is relatively poor and the circuit is interfered, the present invention proposes an enhancement circuit, which can be applied to the transimpedance amplifier to enhance the power supply rejection ratio of the transimpedance amplifier, thereby solving the crosstalk problem of the array readout circuit
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[0015] The specific embodiment of the present invention is described below in conjunction with accompanying drawing:
[0016] The structure diagram when the enhanced circuit proposed by the present invention is applied to a transimpedance amplifier is as follows: figure 2 As shown, the enhanced circuit of the present invention includes a first capacitor C1, a second capacitor C2, a first NMOS transistor MN1, a second NMOS transistor MN2, a third NMOS transistor MN3, a first PMOS transistor MP1, a second PMOS transistor MP2, a first Three PMOS transistors MP3, fourth PMOS transistors MP4, current source I B and bias voltage source V B The gate of the first PMOS transistor MP1 is connected to the drain of the first NMOS transistor MN1, the gate of the third PMOS transistor MP3, the gate and drain of the second PMOS transistor MP2, and the drain is connected to the drain of the fourth PMOS transistor MP4 Source and power supply terminal of the transimpedance amplifier TIA V D...
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The invention relates to an enhancement circuit for improving the power supply rejection ratio of a transimpedance amplifier, which belongs to the field of analog signal processing in laser three-dimensional imaging. The fourth PMOS transistor, the first NMOS transistor, the second PMOS transistor and the first PMOS transistor form a negative feedback loop ①, the first NMOS transistor, the second PMOS transistor and the third PMOS transistor form a positive feedback loop ②, and the first The NMOS transistor, the second NMOS transistor and the third NMOS transistor form a negative feedback loop ③, and the gain of the negative feedback loop ③ is greater than the gain of the positive feedback loop ②. The present invention can stabilize the power supply terminal V of the transimpedance amplifier through the joint action of the positive feedback loop and the negative feedback loop. DDA Voltage, thereby improving the power supply rejection ratio of the transimpedance amplifier, thereby solving the crosstalk problem of the APD array readout circuit.
Description
technical field [0001] The invention belongs to the field of analog signal processing in laser three-dimensional imaging, and in particular relates to an enhancement circuit applied to increase the power supply rejection ratio of a transimpedance amplifier in an avalanche diode (Avalanche Photodiode, APD) array readout circuit. Background technique [0002] Laser three-dimensional imaging is a typical application of laser radar. Avalanche diode (Avalanche Photodiode, APD) array photodetector is the core device of laser radar, usually composed of APD array and corresponding readout circuit. The transimpedance amplifier is a key part of the readout circuit, and its function is to convert the weak current pulse signal output by the photodiode into a voltage pulse signal. Common linear mode APD array readout circuits such as figure 1 shown, the external power supply V IN Unity powers the transimpedance amplifier TIA, where R par is the parasitic resistance of the wire. When ...
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Login to View More IPC IPC(8): H03F1/26H03F3/08H03F3/45
Inventor 甄少伟周万礼章玉飞胡怀志路统霄罗萍张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA