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Advanced packaging structure for graphene-based IPM (Intelligent Power Module) module, and processing technology

A graphene-based, packaging structure technology, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of IPM electrical, mechanical, corrosion, high power density, module failure, etc., to improve the use of Longevity, efficient heat dissipation, and improved reliability

Pending Publication Date: 2019-05-21
黄山谷捷股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the IPM module is small in size and compact in structure, and contains multiple power devices inside, resulting in a high power density and serious local heating
For the IPM package structure, temperature is the most important factor affecting its reliability. If the heat generated by the module cannot be removed in time, the internal temperature of the module will be too high, which will affect the electrical, mechanical, corrosion and other aspects of the IPM, and eventually lead to module failure

Method used

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  • Advanced packaging structure for graphene-based IPM (Intelligent Power Module) module, and processing technology
  • Advanced packaging structure for graphene-based IPM (Intelligent Power Module) module, and processing technology
  • Advanced packaging structure for graphene-based IPM (Intelligent Power Module) module, and processing technology

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Embodiment Construction

[0042] The present invention will be further described below in conjunction with drawings and embodiments.

[0043] The present invention proposes an advanced packaging structure of a graphene-based IPM module, which generally includes an IGBT chip, a fast recovery diode (Fast Recovery Diode, FRD) chip, a driver chip, and a graphene-based DBC liner (ie, a graphene-based copper-clad ceramic substrate) , buffer pads, solder layers, solder balls, plastic enclosures, packaging resins, thermal grease, and heat sinks. Wherein, the upper graphene-based DBC liner 17 is obtained by mounting the graphene-based film prepared by the redox method in the graphene application area designed on the surface of the upper copper layer of a copper-clad ceramic substrate, and the lower graphene-based DBC liner 18 is obtained. It is obtained by growing a graphene film by chemical vapor deposition in the graphene application area designed on the surface of the upper copper layer of another copper-cla...

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Abstract

The invention relates to an advanced packaging structure for a graphene-based IPM (Intelligent Power Module) module, and a processing technology. The structure comprises an IGBT (Insulated Gate Bipolar Translator) chip, a quick recovery diode chip, a driving chip, a graphene-based copper-covering ceramic substrate, a buffer cushion, a soldering flux layer, a soldering ball, a plastic shell, packaging resin, heat conduction silicone grease and a radiator. An advanced packaging form of chip flipping is adopted to replace bonding leads between chips and bonding leads from the chip to the substrate so as to realize the double-face heat dissipation of the IPM module, and module reliability is improved. Meanwhile, a high-heat-conduction graphene material is adopted to enhance the quick heat dissipation of the local hot spots of the substrate, so that the highest temperature of the IPM module is lowered, and the service life of the module is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an advanced packaging structure and processing technology of a graphene-based IPM module. Background technique [0002] Intelligent Power Module (IPM) is based on IGBT and integrates logic, control, detection and protection circuits. Compared with ordinary IGBT, it has greatly improved system performance and reliability. At the same time, due to IPM The on-state loss and switching loss are relatively low, which reduces the size of the heat sink, so the volume of the whole system is reduced a lot, which adapts to the development direction of power devices. More and more power electronic devices choose to use power modules instead Discrete components. According to the forecast of IHS Technology, a market research agency, the compound annual growth rate of the consumer sector is expected to reach 15.5% by 2018. Facing the new demand for IPM applications in the c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/373H01L23/498H01L25/16H01L25/18H01L21/50
CPCH01L2224/33H01L2224/73253
Inventor 鲍婕徐文艺王胜群许媛周斌罗仁棠
Owner 黄山谷捷股份有限公司
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