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Nanowire array, optoelectronic device and manufacturing method thereof

A technology of nanowire arrays and optoelectronic devices, applied in nanostructure manufacturing, semiconductor/solid-state device manufacturing, nano-optics, etc., can solve the problems of reducing material quality, achieve flexible heterojunction structure, simple device process, and low defects effect of density

Inactive Publication Date: 2019-05-24
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during the growth process, the three-dimensional dense single-crystal layered structure will generate dislocations at the substrate-layer interface and propagate through the active region through the entire layered structure to the surface, thereby degrading the quality of the material.

Method used

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  • Nanowire array, optoelectronic device and manufacturing method thereof
  • Nanowire array, optoelectronic device and manufacturing method thereof
  • Nanowire array, optoelectronic device and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment

[0044] In this example, a three-dimensional dense layered structure composed of one-dimensional InGaN nanowires is prepared through the following steps:

[0045] 1) Provide a Si(111) substrate through nitriding treatment;

[0046] 2) On the Si(111) substrate, one-dimensional InGaN nanowires were epitaxially grown using plasma-assisted molecular beam epitaxy equipment (Vecco Gen II), and the specific settings were as follows:

[0047] Adjust the In / Ga total metal beam current to obtain a growth rate of about 0.5 μm / h;

[0048] By adjusting the In / Ga beam current ratio to 5 and the growth temperature at 450°C, the active N beam current is three times that of the metal In / Ga beam current.

[0049] Through the above method, a three-dimensional dense InGaN structure (such as figure 1 with figure 2 As shown), the thickness of the InGaN three-dimensional dense structure is about 600nm.

[0050] figure 1 A is a top view of a schematic three-dimensional dense structure of InGaN, ...

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Abstract

The invention provides a nanowire array. All nanowires in the nanowire array are closely adhered, the nanowires make contact with each other through the side walls, and a three-dimensional dense layered structure is formed, wherein the nanowires are InGaN-based materials. The invention further provides an optoelectronic device with the nanowire array which is epitaxially grown on the substrate surface. The invention further provides a method for manufacturing the nanowire array and the optoelectronic device.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a nanowire array, an optoelectronic device with the nanowire array and a manufacturing method thereof. Background technique [0002] One-dimensional nanoarrays and three-dimensional dense single crystal layers are often used in the epitaxial structure layer of semiconductor devices, especially for semiconductor optoelectronic devices such as light-emitting diodes, lasers, solar cells and high-power electronic amplifiers. Generally, the intrinsic properties of epitaxial layer materials used in optoelectronic devices require: low defect density, large active region volume, flexible heterostructure formation, simple preparation process, and stable lateral structure in the material layer. [0003] InGaN is an ideal material for optoelectronic devices. With the increase of In content, the bandgap of InGaN can be continuously adjusted from the ultraviolet band corresponding to G...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B1/00B82B3/00B82Y10/00B82Y40/00
CPCB82Y40/00B82Y10/00H01L33/08H01L33/18B82Y20/00H01L29/0676H01L29/2003B81C1/00031B81B2207/056H01L21/02603H01L21/0254H01L21/02595H01L21/02381H01L21/02433H01L21/02631H01L21/02378H01L21/02389H01L21/02395H01L21/0242
Inventor 理查德·内策尔王朋周国富斯特凡诺·桑吉内蒂
Owner SOUTH CHINA NORMAL UNIVERSITY
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